High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

Abstract

High-power blue and violet light-emitting diodes (LEDs) based on III–V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single-quantum-well-structure was used. The violet LEDs produced 5.6 mW at 20 mA, with a sharp peak of light output at 405 nm, and exhibited an external quantum efficiency of 9.2%. The blue LEDs produced 4.8 mW at 20 mA and sharply peaked at 450 nm, corresponding to an external quantum efficiency of 8.7%. These values of the output power and the quantum efficiencies are the highest ever reported for violet and blue LEDs.

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

“…The second term (2q 2 ηΦ b ) is due to the background radiation Φ b to which the detector is exposed. If the detector is limited by thermal noise, that is, if the thermal noise far exceeds the background radiation induced signal, then the detectivity becomes (3) where k is Boltzmann's constant and T is the absolute temperature. Note that the detectivity D* is directly proportional to (R 0 A) 1/2 when the detector is noise-limited.…”

Standard‐free composition measurements of Alx In1–xN by low‐loss electron energy loss spectroscopy

“…Al x In 1-x N is particularly attractive since it can be grown lattice matched to GaN and AlGaN [4], ensuring stress-free heterostructures with tunable bandgap [5]. Simultaneously, the constant size reductions of III-nitride device structures are accompanied by a need for increased control and understanding of growth and diffusion mechanisms [6,7] along with accurate compositional and structural information.…”

Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

“…29) The InGaN epilayer has been grown mainly by metal organic chemical vapor deposition (MOCVD). [1][2][3][4][5][15][16][17][18][19] In this paper, we will report the development of InGaN LEDs with active layers grown using mixed-source InGaN materials on n-type GaN substrates by a selected-area growth (SAG) method and three fabrication steps: photolithography, epitaxial layer growth, and metallization; a previously reported experimental process using a mixed-source HVPE apparatus was used for this experiment. The SAG InGaN LEDs were prepared with In compositions of 11.0 and 6.0% in the InGaN active layer.…”

“…Although InGaN epilayers with bandgaps varying from 0.8 to 3.4 eV have been used as the active layers for optical devices, [1][2][3][4][5][6][7] it is difficult to use existing hydride vapor-phase epitaxy (HVPE) technology to grow an InGaN epilayer with an appropriate In composition at high temperatures [8][9][10][11][12] because of the large difference between the lattice parameters of GaN and InN. [13][14][15][16] Instead, InGaN epilayers grown on GaN buffer layers have often been used as the light-emitting layers.…”