High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

“…The decreasing FWHM values for GaAs/Si, GaAs/Ge/Si and GaAs/GeOI are indicative of the improved GaAs structural quality. These values are comparable to those reported in the literature for GaAs grown on GeOI and Ge/Si substrates [23,24]. Noteworthy is the fact that the presence of the APD QD filter hardly changes the FWHMs (66 and 48 arcsec for GaAs on Ge/Si and GeOI, respectively), in agreement with Ref.…”

Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

“…7 In addition, a thin layer of Ge can be used as a buffer to integrate III-V channel materials to achieve high electron mobility. 8,9 Hence, Ge and III-V materials epitaxially grown on Si have emerged as a promising candidate for the next generation of high-mobility field-effect transistors. 10 While the superior carrier mobility in Ge is recognized, the use of epitaxially grown Ge-on-Si (GoS) wafer-scale substrates for high-mobility transistors has not been commercially demonstrated because of the difficulty in achieving Ge of sufficient quality.…”

Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

“…Ge atoms might preferentially diffuse into the epitaxial GaAs layer through these defects. It was reported that the LT‐MEE technique can be used to suppress the interdiffusion of Ge, Ga, and As . Figure b shows the surface morphology of sample B, which has a 3‐nm LT‐MEE GaAs nucleation layer.…”

“…There were four different growth schemes of the nucleation layer so that the effects of LT‐MEE GaAs and GaAsSb barrier layers could be distinguished. Care was taken to ensure that no excessive As atoms were incorporated into the MEE GaAs layer . The growth temperature was 500 °C for the GaAsSb layer, 500 °C for the GaAs layer, and 300 °C for the LT‐MEE GaAs layer.…”