2008
DOI: 10.1063/1.2917452
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High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Abstract: The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells (QWs) embedded in the GaN microdisks. Q factors of up to 3500 are obtained. The measured Qs are found to be limited by the QW absorption. Room temperature laser action is achie… Show more

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Cited by 65 publications
(58 citation statements)
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“…Recent reports on c-plane GaN/InGaN microdisks have demonstrated improved performance and the achievement of room-temperature lasing. [1][2][3] Recent studies have shown that nonpolar GaN is not limited by the quantum confined Stark effect, which spatially separates electron-hole pairs in quantum wells, reducing the radiative recombination efficiency. 4,5 Comparing c-plane with nonpolar m-plane GaN microdisks could further illuminate the differences between these orientations of material and lead to a better understanding of the fundamental effects of polarization in GaN lightemitting devices.…”
Section: Observation Of Whispering Gallery Modes In Nonpolar M-plane mentioning
confidence: 99%
“…Recent reports on c-plane GaN/InGaN microdisks have demonstrated improved performance and the achievement of room-temperature lasing. [1][2][3] Recent studies have shown that nonpolar GaN is not limited by the quantum confined Stark effect, which spatially separates electron-hole pairs in quantum wells, reducing the radiative recombination efficiency. 4,5 Comparing c-plane with nonpolar m-plane GaN microdisks could further illuminate the differences between these orientations of material and lead to a better understanding of the fundamental effects of polarization in GaN lightemitting devices.…”
Section: Observation Of Whispering Gallery Modes In Nonpolar M-plane mentioning
confidence: 99%
“…7,8 However, the superior optical confinement capabilities of GaN WGM microcavities are invariably weakened by optical leakage through its transparent sapphire substrate. Recently, GaN-based undercut two-dimensional (2D) WGM microdisk lasers fabricated through the removal of sacrificial layers embedded within the device structure by photoelectrochemical (PEC) or selective wet-etching [9][10][11] have been reported to effectively reduce such losses. Similar undercut microdisk structures have also been demonstrated by controlled wet-etch removal of the underlying Si substrate using GaN-on-Si materials.…”
mentioning
confidence: 99%
“…As in the case of PC cavities, the spectra are composed of a spectrally broad emission corresponding to the embedded QDs, and a series of peaks corresponding to WGMs. The high quality of the microdisks and the low absorption of the QDs allow to observe periodic series of sharp peaks, corresponding to WGMs with the same radial order and a different azimuthal order, in contrast with previous studies on nitride microdisks [12][13][14][15]. Figure 6(c) presents a high-resolution spectrum (grating with 3600 lines mm À1 , resolvance 20,000) of the 2 mm microdisk.…”
mentioning
confidence: 79%
“…[1][2][3]. In order to better control the light emission in the UV spectral range, various optical resonators are presently investigated, based on GaN or ZnO nanostructures: Fabry-Perot modes in planar microcavities and in nanowires [4][5][6][7][8][9][10], whispering gallery modes (WGMs) in microwires [11] and microdisks [12][13][14][15], cavities in photonic crystal (PC) membranes [16][17][18][19], as well as random lasing in powders [20] and waveguides [21]. Realizing photonic nanostructures with large quality factors in the UV range is challenging due to the larger scattering losses compared to similar structures in the visible and IR spectral ranges.…”
mentioning
confidence: 99%