High-Rate rf Sputtering System

Abstract

A sputtering target system utilizing high vacuum as the electrical insulator is described. This technique permits the application of high rf power to the target. Power up to 5000 W has been applied to a 7.3-cm-diam electrode bonded to a 10-cm-diam Al2O3 target. Under the proper conditions of geometry, gas pressure, and magnetic field, this has resulted in deposition rates of Al2O3 in excess of 6300 Å/min. For an SiO2 target with 3000-W input, deposition rates in excess of 10 000 Å/min have been obtained. Typical deposition rates of Al2O3, are given for this target system as a function of rf power, magnetic field, and gas pressure.