High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates

Abstract

Articles you may be interested inEffect of conductive TiN buffer layer on the growth of stoichiometric VO2 films and the out-of-plane insulator-metal transition properties

Revised Pourbaix diagrams for the vanadium – water system

“…Vanadium oxides (V-O) have been widely studied during the last three decades [1][2][3][4][5][6][7][8][9][10][11][12], mostly due to their broad applications in catalysis and microelectronics. Vanadium is a transition metal with an elevated melting temperature and good corrosion resistance vs. different acids and alkalis at low temperatures.…”

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

“…We previously reported that TiO 2 buffer layers permit the fabrication of VO 2 films that show a sharp MIT on SiO 2 /Si(100) substrates at process temperatures below 670 K, which is compatible with a BEOL process. 17 By using the TiO 2 -buffer technique, we deposited V 1−x−y Cr x Nb y O 2 films on SiO 2 /Si(100) substrates to realize both large TCR values and an absence of thermal hysteresis. Figure 4 shows the ρ-T curves for the V 0.90 Cr 0.06 Nb 0.04 O 2 films on Al 2 O 3 and TiO 2 /SiO 2 /Si substrates.…”

“…We have previously described the detailed conditions for growth of such films on Al 2 O 3 15 or TiO 2 /SiO 2 /Si substrates. 17 The film thickness was set at 70-110 nm, as confirmed by using a surface profiler. Note that there were no significant differences in the structural or electronic properties of the films within this thickness range.…”

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

“…Due to the expected involvement of thermally induced metallic phases, the abruptness of the temperature-driven metal-insulator transition has been regarded as a critical parameter of the resistive switching based on the metal-insulator transition for both the thermal and nonthermal mechanisms, which directly determines the switching behavior, [24][25][26] and the resistive switching has been believed to be caused by the abrupt state change that is observed in the resistivity-temperature characteristics. In materials with the metal-insulator transition, the abruptness of the temperature-driven transition has been estimated from the temperature coefficient of resistivity (TCR) defined as |(1/ρ) (dρ/dT)|, where ρ is the resistivity and T is the temperature of the material, [27,28] and a large TCR of >100% K −1 (as a discontinuity in the resistivity-temperature curve) has been generally required for the resistivity-temperature characteristics to induce high-speed switching as Mott switching devices [14,21,[24][25][26] and sharp firing as Mott neurons. [5][6][7]15] However, to obtain a high TCR, highly controlled stoichiometry and crystallinity is essentially required for the switching material, [27][28][29][30][31] and severe restrictions have been imposed on the selection of the switching and substrate materials in the thin film fabrication.…”

“…[5][6][7]15] However, to obtain a high TCR, highly controlled stoichiometry and crystallinity is essentially required for the switching material, [27][28][29][30][31] and severe restrictions have been imposed on the selection of the switching and substrate materials in the thin film fabrication. [27][28][29]31] Device applications of materials with the metalinsulator transition have therefore been complicated thus far due to the requirement of the transition abruptness.…”