High-temperature Schottky diodes with thin-film diamond base

Gildenblat, G.; Grot, S.A.; Hatfield, C.W.; Badzian, Andrzej; Badzian, T.

doi:10.1109/55.62959

Cited by 65 publications

(6 citation statements)

References 6 publications

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“…Most p-type Schottky diodes have been fabricated [18,19,22,41, 421 using metal films of Au, Ag, Cr or Ni on type IIb substrates or on boron-doped homoepitaxial layers. Using a moderate boron doped layer on a heavily doped synthetic type IIb substrate, the disturbing high series resistance of the bulk can be reduced enabling high current densities.…”

Section: Schottky Diodesmentioning

confidence: 99%

Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications

Borst

Weis

1996

Phys. Stat. Sol. (a)

124

101

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For electronic applications, a series of boron-doped homoepitaxial diamond layers of high crystal quality have been grown on (100)-cut diamond substrates using the microwave plasma CVD method. The B-concentration varies from 3 x 1017 to 3 x lozo atoms/cm3. The layers are selectively grown into the shape of Hall bars using a sputtered SiOn mask. The diamond substrates are 3 x 3 x 1 mm3 in size. Gold wires are bonded to ohmic contacts on the Hall bars formed by an electron beam evaporated Mo/Pt/Au sandwich annealed at 950 "C for 30 min. Electrical characterization is performed in eight samples over the temperature range from 100 to 1300 K. The results arc discussed in detail. For diamond layers grown on synthetic nitrogen-doped (type Ib) substrates, current-voltage characteristics of diode type can be observed in the temperature range from 360 to 900 "C. Green electroluminescent light is emitted from the p-n junction area. High current Schottky diodes are also fabricated which consist of a gold contact to a moderately B-doped homoepitaxial layer grown on a synthetic heavily boron-doped (type I1 b) substrate. Fur elektronische Anwendungen wird eine Serie von Bor-dotierten homoepitaktischen Diamantschichten hoher kristalliner Gute auf (100)-geschnittenen Diamantsubstraten mittels der Mikrowellenplasma-unterstutzten CVD-Methode aufgewachsen. Die B-Konzentration variiert von 3 x 1017 bis 3 x lozo Atome/cm3. Die Schichten werden selektiv mittels gesputterter SiOz-Masken als Hallkreuze gewachsen. Die Diamantsubstrate sind 3 x 3 x 1 mm3 grof3. Golddrahtc werden an ohmsche Kontakte gebondet. Diese werden als Mo/Pt/Au-Schichtpakete mittels Elektronenstrahl-Aufdampfen und halbstundigem Tempern bei 950 "C hergestellt. Die elektrische Charakterisierung erfolgt bei acht Proben iiber den Temperaturbereich von 100 bis 1300 K. Die Ergebnisse werden eingehend diskutiert. Auf synthetischen Stickstoff-dotierten (Typ I b) Substraten werden Strom/ Spannungs-Charakteristikcn vom Diodentyp im Temperaturbereich von 360 bis 900 "C beobachtet. Grunes Elektrolumineszenzlicht wird von der p-n-Kontaktflache emittiert. Hochstrom-Schottkydioden werden ebenfalls hergestellt. Sie bestehen aus einem Goldkontakt zu einer m a i g B-dotierten homoepitaktischen Schicht, die auf einem synthetischen, hochdotierten (Typ I1 b) Substrat aufgewachsen wurde.T. H. BOWT and 0. WEIS EB = 0.37 eV, if moderately doped, and becomes metallic with EB = 0 eV for heavy d o p ing. Thus, suitably B-doped diamond can be used over a broad temperature range for p-type conduction. Substitutional single nitrogen atoms are donors [2] with an ionization energy EB = 1.7 eV which is too high for a utilizable n-type conduction at room temperature. At present, there is no n-type diamond available for applications at room temperature. Nevertheless, due to the exceptional physical properties of diamond [3], a variety of unusual electronic applications of semiconducting diamond are expected [4 to 61.Electronic diamond devices of high quality can only be demonstrated in monocrystalline...

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Section: Schottky Diodesmentioning

confidence: 99%

Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications

Borst

Weis

1996

Phys. Stat. Sol. (a)

124

101

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“…Gildenblat et al has reported high temperature Schottky diode with thin film diamond [14]. The reported diodes exhibited rectifying -characteristics in the range of 26-500 C. Ebert et al reported high current / -diamond Schottky diode with a low series resistance of 14 at 150 C and of 8 at 500 C [15].…”

Section: A Status Of Polycrystalline Diamond Film (Pdf)-based Schottmentioning

confidence: 99%

PECVD Diamond-Based High Performance Power Diodes

Gürbüz

Kang²,

Davidson³

et al. 2005

IEEE Trans. Power Electron.

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In this study, we have designed, fabricated, characterized, and analyzed plasma-enhanced chemical vapor deposition (PECVD) diamond-based Schottky diodes for high power electronics applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: 1) growth, 2) doping, 3) Schottky contact, and 4) different device structures in order to achieve better performance parameters. We have obtained 500 V of breakdown voltage on one device and 100 A/cm 2 of current density on another device, optimized for different applications. These values are among the highest reported with the polycrystalline diamond-based devices. We have utilized different fabrication techniques for the growth of PECVD-diamond, different metals as a Shottky contact on diamond film and also optimized structural parameters such as diamond film thickness and doping concentration in order to achieve a high-performance power diodes. Analysis of the current conduction mechanisms of these devices in this study revealed a space-charge-limited current conduction mechanism in the forward bias region while thermionic field emission controlled current conduction mechanism in the reverse bias region. Performance parameters such as forward voltage drop, barrier height, and current density were analyzed as a function of temperature and type of metal Schottky contacts. Laboratory. He conducts applied research in advanced electronic materials and microelectronic microsensors and is developing programs in synthetic diamond and other rugged advanced wide band gap semiconductors for electronic, biological, and mechanical applications. He made first determinations of elastic modulus, tensile strength, chemical sensing properties, tip electron emission of diamond films, and developed first technology for patterning diamond films. He designed, fabricated, developed, and characterized first diamond MEMS sensors, diamond-based chemical sensors, resistors, capacitors, and highly efficient diamond microemitter vacuum microelectronic devices. He has over 100 publications and six patents in this area.

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“…PI-2611 is more viscous than PI-2610 and completely planarizes the diamond substrate. Curing the PI-2611 layer 192 along with the PI 2610 layer completes the planarizing process.…”

Section: Planarizationmentioning

confidence: 99%

“…Steady advances in PECVD have resulted in the realization of high-quality, polycrystalline diamond films for device applications. Thus, diamond-based microelectronic devices, such as Schottky diodes and FETs, 138,147,148,192 have been fabricated for high-temperature (T>500°C) applications. Likewise, microelectronic gas sensors based on CVD diamond can operate at considerably higher temperatures with a wider dynamic range and more sensitivity than those based on silicon technology.…”

Section: Diamond Chemical Gas Sensorsmentioning

confidence: 99%