High voltage device edge termination for wide temperature range plus humidity with surface charge control (SCC) technology

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

“…Our combination of the linearly-narrowed field limiting ring (LNFLR) [73] and the surface-charge control (SCC) structure as an edge termination structure is an effective approach (Fig. 24) [74]. One of the key wafer processes is forming the semi-insulating films [75][76][77].…”

“…A various kind of reliability tests are quite acceptable in both hot and cold temperatures (Fig. 25) [74] without any sacrifices such as a leakage current increase.…”

“… Environmental toughness test results for 6.5 kV IGBT SCC structure on LNFLR [74] (a) HTRB at 150°C, (b) Low temperature + humidity test V CE = 5540 V, (c) Schematic flow of lowtemperature + humidity test…”

Termination area design for reduced leakage current and improved ruggedness of HV IGBTs

“…Insulated gate bipolar transistors (IGBTs) are widely used for high-voltage applications, owing to their remarkable efficiency and excellent cost versus performance effectiveness enabled by continuous technological advancements. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] One key feature of IGBTs is hole injection from the Collector which creates a high-level of plasma in the drift region, leading to a very low on-state resistance. Termination area is an essential part of the IGBT chip, needed to efficiently spread the potential at the edge of the die and prevent premature breakdown.…”