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.55. Jk, 78.55.Et, 81.15.Hi ZnO epitaxial layers grown on GaAs(111)B substrates by plasma assisted MBE with different O/Zn flux ratios are characterized by photoluminescence (PL), X-ray diffraction (XRD) θ -2θ scan, ω scan, and reciprocal lattice mapping. Low temperature PL spectra are dominated by bound exciton bands at 3.360 eV and 3.330 eV. The 3.360 eV band is strong in samples grown under Zn-rich cindition and the 3.330 eV band is strong in samples grown under O-rich condition. The epitaxial orientation relationship is ZnO(0001)//GaAs(111) and

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Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 ~ 300 °C using metallic Zn, metallic Ga and plasma-excited oxygen as source materials. Deposited films were characterized by X-ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm-thick Ga-doped ZnO films deposited at 290 °C showed low resistivity (~2 × 10 -4 Ω cm) and high transmittance in the visible region (~85%).