Low temperature growth of transparent conducting ZnO films by plasma assisted deposition

Abstract

Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 ~ 300 °C using metallic Zn, metallic Ga and plasma-excited oxygen as source materials. Deposited films were characterized by X-ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm-thick Ga-doped ZnO films deposited at 290 °C showed low resistivity (~2 × 10 -4 Ω cm) and high transmittance in the visible region (~85%).

Room-temperature intermixing for adhesion enhancement of Cu/SiO2interface by adopting SiO2surface dope and noble metal catalyzation

“…At first, a 150-nm-thick polycrystalline ZnO layer was prepared on SiO 2 (fused silica glass) substrates by metalorganic chemical vapor deposition (MOCVD) 18) or molecular beam epitaxy (MBE). 19,20) These techniques provide device-grade ZnO 18,19,[21][22][23][24][25][26][27][28] and thus ensure to minimize the interfering effects of ZnO quality, such as crystallinity or impurity incorporation. Deposition temperatures of MOCVD-and MBE-ZnO were 400 °C and room temperature, respectively.…”

Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

“…Ga-doped and undoped ZnO films of 200-600 nm thickness were grown by plasma assisted deposition 9) at temperatures of 50-300 C. Zinc and gallium vapors were supplied by heating metallic sources. Oxygen was excited in a microwave cavity and neutral atomic radicals were supplied onto the substrate.…”

“…The resistivity and carrier density of the undoped ZnO film showed a strong dependence on the oxygen/zinc supply ratio. 9) With increasing the zinc source temperature, resistivity decreased and carrier density increased owing to the formation of oxygen vacancies and/or interstitial zinc acting as donors. The introduction of oxygen vacancies and/or interstitial zinc is useful for preparing low-resistivity TCFs.…”

Characterization of thin films from reflection and transmission ellipsometric parameters

“…assisted deposition technique. 18) The ZnO film (d 1 < 300 nm) was grown at 400 °C. In data analysis, the optical constants of the substrate employed the online database.…”