High ε gate dielectrics Gd2O3 and Y2O3 for silicon

Kwo, J.; Hong, M.; Kortan, A. R.; Queeney, K. T.; Chabal, Yves J.; Mannáerts, J. P.; Boone, T.; Krajewski, J. J.; Sergent, A. M.; Rosamilia, J. M.

doi:10.1063/1.126899

Cited by 272 publications

(138 citation statements)

References 15 publications

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“…However, it also turns out that the thermodynamic data for many oxides was not so accurate. It was subsequently found that ZrO 2 is actually slightly unstable [12,13] [14][15][16][17][18].…”

Section: Thermodynamic Stabilitymentioning

confidence: 99%

High dielectric constant oxides

Robertson

2004

Eur. Phys. J. Appl. Phys.

1,563

828

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Abstract. The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2, such as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high K oxides in capacitors of dynamic random access memories is also covered. PACS

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Section: Thermodynamic Stabilitymentioning

confidence: 99%

High dielectric constant oxides

Robertson

2004

Eur. Phys. J. Appl. Phys.

1,563

828

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“…Among several binary earth metal oxides under consideration, Gadolinium sesquioxide, one of the promising substitutes for SiO 2 in ultra-large-scale integration (ULSI), has attracted much attention recently. It has a band gap of 5.3 eV [9,10], and a high dielectric constant of 14-20 [11,12], meaning that a 4.9 nm film can satisfy the requirement of a 1 nm equivalent oxide thickness. Another interesting topic on studying Gadolinium oxide is its structures.…”

Section: Introductionmentioning

confidence: 99%

Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

Zhou

Chai

Yang

et al. 2004

Journal of Crystal Growth

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Gadolinium oxide thin films have been prepared on silicon (1 0 0) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd 2 O 3 structure with preferred orientation ð % 4 0 2Þ at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (2 0 2), and finally, the cubic structure appeared at the substrate temperature of 700 C, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd 2 O 3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. r

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“…Epitaxial oxide/Si heterostructures are also of interest as templates for the integration of epitaxial functional materials with Si [2]. Binary insulators with the cubic fluorite structure, and its derivatives, are known to grow epitaxially on (111) oriented Si [3][4][5][6][7][8][9][10]. Oxides with the pyrochlore and bixbyite structures are vacancy-ordered derivatives of the fluorite structure and have lattice parameters that are approximately twice that of Si.…”

mentioning

confidence: 99%