Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

Bae, Si‐Young; Jung, Byung Oh; Lekhal, Kaddour; Kim, SangYun; Lee, Jun Young; Lee, Dong-Seon; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

doi:10.1039/c5ce02056e

Cited by 35 publications

(24 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the PL intensity decreased as the SiH 4 flow increased, indicating the reduced crystal quality of the GaN microrods [21]. To date, the majority of 3D GaN structures fabricated by selective area growth (SAG) have involved MOCVD with a continuous flux [21][22][23] or pulse-mode growth [12,[24][25][26], and MBE [27]. In contrast, there have been few reports on the growth of 3D GaN structures by SAG-HVPE because of the difficulty in achieving elongated structures [28].…”

Section: Introductionmentioning

confidence: 93%

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

Lekhal

Bae

Lee

et al. 2016

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 93%

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

Lekhal

Bae

Lee

et al. 2016

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…So far, different growth approaches have been investigated. For instance, catalyst-assisted growth 9 , self-assembled growth 10 , 11 , selective area epitaxy with 12 or without pulsing the precursors 13 have been reported. The device processing of such structures is rather complicate.…”

Section: Introductionmentioning

confidence: 99%

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin

Bae

Shubina

et al. 2018

Sci Rep

View full text Add to dashboard Cite

We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly the whole visible region, including UV, blue, green, and orange ranges. The intensity of each emission is strongly dependent on the current density, however the LEDs demonstrate a rather low color saturation. Based on transmission electron microscopy data and comparing them with electroluminescence and photoluminescence spectra measured at different excitation powers and temperatures, we could identify the spatial origination of each of the emission bands. We show that their wavelengths and intensities are governed by different thicknesses of the QWs grown on different crystal facets of the NRs as well as corresponding polarization-induced electric fields. Also the InGaN incorporation strongly varies along the NRs, increasing at their tips and corners, which provides the red shift of emission. With increasing the current, the different QW regions are activated successively from the NR tips to the side-walls, resulting in different LED colors. Our findings can be used as a guideline to design effectively emitting multi-color NR-LEDs.

show abstract

“…Motivated by the above issues, we here report the morphological evolution of GaN nanorods with Si and Mg dopants. To grow highly elongated GaN nanorods, we have employed pulsed‐mode MOCVD . By comparing the growth behaviors of GaN nanorods with either mono‐doping or co‐doping, we are able to propose the mechanisms that may govern the growth of the doped GaN nanorods.…”

Section: Introductionmentioning

confidence: 99%

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Bae

Lekhal

Lee

et al. 2017

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

Injecting current with a uniform carrier concentration is important for applications with three‐dimensional architectures such as vertical power devices or displays. In III‐nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective‐area growth of doped GaN nanorods grown by pulsed‐mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono‐doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co‐doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure‐based electronic or photonic devices.

show abstract

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

Abstract: Precisely controlled morphology of GaN nanorods was obtained on a thin AlN seed layer and their height increased as the diameter of the mask openings decreased.

Cited by 35 publications

References 47 publications

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Contact Info

Product

Resources

About