Highly-integrated power cell for high-power wide band-gap power converters

Abstract

Abstract-The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be paid to switching cell design to mitigate the effects of circuit parasitics and fast voltage transitions which would otherwise limit the attainable switching speed and lead to increased levels of EMI. This paper presents a modular, powercell solution which allows the creation of any two-level topology converter. The cell structure enables fast switching of wide bandgap semiconductor devices while allowing high power converters to be fabricated using multiple, smaller commutation cells. Close integration of semiconductor dies, decoupling capacitors, gate drives and an output filter with a single ceramic substrate to act as the thermal path allows dramatic increases in power density without compromising converter performance.

Novel Silicon Carbide Integrated Power Module for EV application

“…The advantages of such a package is to significantly reduce electromagnetic emissions compared to the individual elements, volume and weight saving through a shared enclosure and cooling. The three phase converter with the three SBPC and the input filtering components and the shared integrated cooling system are shown in [2]. This paper focuses more on the fabrication of the SBPC unit.…”

“…Therefore, to achieve their full performance with regard to low switching losses and low conduction losses, they can only be used if the module layout is designed with low parasitic inductances and low thermal impedance [1]. Through addressing the challenges described above, a new solution has been presented by the authors [2] for the structural integration of power electronic converters to meet targets for increased power density, improved electrical performance and reduced cost without compromising thermal performance or reliability. The aim is to integrate multiple functional elements, i.e.…”

“…semiconductor devices, DC-link capacitors, output filters, current sensing, and gate driver within a single enclosure sharing a common cooling circuit. The highly integrated matrix converter package has been reported based on three Single Basic Power Cell (SBPC) unit with an input filtering component enclosed in an integrated direct-substrate jet impingement cooling system that cools the whole system, the power switches and the integrated inductors [2]. The work presented in this paper focuses more on the design, fabrication and characterization of the Single Basic Power Cell (SBPC) unit.…”

IEEE ITRW Working Group Position Paper-Packaging and Integration: Unlocking the Full Potential of Wide-Bandgap Devices

“…However, careful attention must be paid to switching cell design to mitigate the effects of circuit parasitics and fast voltage transitions, which would otherwise limit the attainable switching speed and lead to increased levels of EMI. A modular, power-cell solution is proposed in [1], which allows for the creation of any two-level topology converter. The cell structure enables fast switching of WBG semiconductor devices while allowing high-power converters to be fabricated using multiple smaller commutation cells.…”

A novel manufacturing technique for integrating magnetic components windings on power module substrates

“…Indeed, in order to increase the switching frequency, the requirements of minimising the parasitic elements and containing the electromagnetic interference became stringent. In [1], [2] the authors proposed a modular approach, based on single basic power cells, intelligent power modules that integrate filters and gate drivers circuit. This approach allows to optimise locally the commutation loop and the gate driver circuit, hence reducing the parasitic inductances to reach SiC and Gan full potential.…”