Highly Tunable Multifunctional BaTiO3-Based Ferroelectrics via Site Selective Doping Strategy

Near‐Room‐Temperature Large Electrocaloric Effect in Barium Titanate Single Crystal Based on the Electric Field–Temperature Phase Diagram

“…Therefore, massive efforts have been put into ion substitution in the BaTiO 3 system, including Sr 2þ , La 3þ , Ce 3þ , Nd 3þ , Sm 3þ , Eu 3þ , and Gd 3þ for Ba 2þ , and Zr 4þ , Sn 4þ , and Hf 4þ for Ti 4þ , which tends to shift the Curie temperature and the corresponding EC peak to room temperature. [35][36][37][38][39][40] However, this comes at the expense of the ΔT max value because the phase transition becomes rather diffusive.…”

Feasible Way to Achieve Multifunctional (K, Na)NbO3-Based Ceramics: Controlling Long-Range Ferroelectric Ordering

“…Therefore, a re-entrant-like relaxation behavior appeared at the region of the R–O–T multiphase coexistence at x = 0.04–0.08 due to the difference in electronegativity and size between Sb 5+ and Nb 5+ . Moreover, the decreased tetragonality ( c / a ) with increasing x suggests that the T phase distorts closer to the cubic phase, reflecting the increased distorted degree of the T phase and the compressive lattice distortion (Figure b) . Thus, the increased Sb content enhances the macroscopic symmetry, which is also supported by the decreased phonon frequency of the v 1 mode and the increased FWHM value …”

“…68 Thus, Q 33 values measured at high electric fields and temperatures above T m are more convinced because of the lack of domain switching. 18,69 Here, the neglectable difference in Q 33 values of 0.035 and 0.032 m 4 /C 2 at 27 and 100 °C, respectively, under 80 kV/cm indicates the reliable Q 33 observed at room temperature (Figure 10d). More importantly, Q 33 is within 0.031−0.036 m 4 /C 2 in the whole measurement range of electric fields (60−80 kV/cm) and temperatures (27−100 °C), indicating the weak dependence of Q 33 on both the electric field and temperature.…”

Enhanced Tunability of BaTixSn1−xO3 Films on Dielectric Substrate

“…The most studied ferroelectric material for microwave applications is barium-strontium titanate Ba x Sr 1−x TiO 3 (BST) [3][4][5], in which the formation of a solid solution occurs due to the substitution of A-site atom in ABO 3 perovskite structure. At the same time, there are a number of ferroelectrics, in which the formation of a solid solution occurs due to the B-site substitution [15,16]. Among them the barium titanate-stannate BaTi x Sn 1-x O 3 (BTS) is a potentially promising material for electrically tunable applications.…”

“…Depending on the ratio of the concentrations of Ti and Sn atoms, the value of the relative dielectric permittivity of BTS solid solution in the maximum can reach significant values (2-3) × 10 4 [15]; the introduction of chemically more stable Sn atoms into a solid solution instead of Ti can lead to a decrease in through conductivity and dielectric losses, to a significant increase in the electrical strength of the material, and, as a result, to the possibility of increasing the applied electric field and increasing the dielectric nonlinearity [16]. A number of papers have been published that investigate the structural and electrophysical properties of BTS thin films [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34], including works dedicated to microwave investigations [25,34,35]. The studied films were obtained by chemical solution deposition [22,23,36], ion-plasma sputtering [17][18][19]29,30,34,35], sol-gel technology [24][25][26][27][28]31,32] and laser ablation…”