Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements

Wolfstirn, K. B.

doi:10.1016/0022-3697(60)90157-8

Cited by 71 publications

(30 citation statements)

References 11 publications

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“…Thereafter, atsing a finite-difference form for the three differential equations, relaxation techniques are applied sequentially to the three matrix arrays; this leads to solutions for specific p-n junction problems. Because numerous texts are available on the relaxation solution of partial differential equations, [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] details concerning the method are not repeated here.…”

Section: Discussionmentioning

confidence: 99%

“…From the approximation of (16) and (17), in conjunction with (13), the capacitance of this semiconductor structure is given by From these approximation equations, at small values of forward biasing voltage the space-charge capacitance of this junction increases (with an increase of voltage) until the structure becomes dominated by mobile charge carriers; a further increase of forward biasing voltage results in a decrease of space-charge capacitance.…”

Section: Space-charge Layer Capacitancementioning

confidence: 99%

“…15) a parabolic approximation equation was used to obtain a smooth transition between the two modes of junction operation: large and small values of forward biasing voltage. Thereafter this approximation equation, in conjunction with (13), was used to establish the space-charge layer capacitance arising from electrostatic energy storage.…”

Section: Space-charge Layer Capacitancementioning

confidence: 99%

“…The low-voltagecapacitance is established by electrostatic energy storage within the space-charge layer, and the magnitude of this capacitance is determined by Fig. 15 in conjunction with Eq, (13). At large values of biasing voltage, an increased capacitance arises from minority carrier storage.…”

Section: Space-charge Layer Capacitancementioning

confidence: 99%

See 3 more Smart Citations

On the Mathematical Theory of the Linearly-Graded P-N Junction

Kennedy¹,

O'Brien²

1967

IBM J. Res. & Dev.

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This paper presents a numerical analysis of the mechanisms of operation within a linearly-graded p-n junction. Considered in this analysis are three important modes of junction operation: equilibrium, forward bias. and reverse bias in the collector junction. In addition. calculations of electrical space-charge layer capacitance are presented for the forward-biased linearly-graded junction. The conclusions derived are compared, in graphical form, with the results of previous investigations of the linearly-graded junction.

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Section: Discussionmentioning

confidence: 99%

Section: Space-charge Layer Capacitancementioning

confidence: 99%

Section: Space-charge Layer Capacitancementioning

confidence: 99%

Section: Space-charge Layer Capacitancementioning

confidence: 99%

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On the Mathematical Theory of the Linearly-Graded P-N Junction

Kennedy¹,

O'Brien²

1967

IBM J. Res. & Dev.

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“…2) Gallium (Ga) doping, rather than B doping, is considered to be an effective way to suppress carrier lifetime degradation, so that Ga-doped Si crystals may be used as substrates for solar cells. [3][4][5] However, few reports [6][7][8][9] have included experimental results and discussions on characteristics such as acceptor concentration n A , conductivity mobility C , and resistivity of Ga-doped Si crystals.…”

Section: Introductionmentioning

confidence: 99%

Coupled-wave equations for a corrugated waveguide

Martynov¹

1979

Sov. J. Quantum Electron.

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The temperature dependences of acceptor concentration n A , conductivity mobility C , and resistivity of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (À53 to 87 C). Crystals with Ga concentration N A from 6:1 Â 10 14 to 2:0 Â 10 18 atoms/cm 3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of n A and of crystals with less than 10 16 atoms/cm 3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 10 16 atoms/cm 3 differed from those of B-doped crystals, mainly because the temperature dependence of n A is not in the saturation range and the degree of ionization n A =N A decreases with decreasing temperature from 360 to 220 K. #

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Resistivity of Bulk Silicon and of Diffused Layers in Silicon

Irvin¹

1962

Bell System Technical Journal

725

189

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Measurements of resistivity and impurity concentration in heavily doped silicon are reported. These and previously published data are incorporated in a graph showing the resistivity (at T = 300 0 K ) of n-and p-type silicon as a function of donor or acceptor concentration.The relationship between surface concentration and average conductivity of diffused layers in silicon has been calculated for Gaussian and complementary error function distributions. The results are shown graphically. Similar calculations for subsurface layers, such as a transistor base region, are also given.

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Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements

Cited by 71 publications

References 11 publications

On the Mathematical Theory of the Linearly-Graded P-N Junction

On the Mathematical Theory of the Linearly-Graded P-N Junction

Coupled-wave equations for a corrugated waveguide

Resistivity of Bulk Silicon and of Diffused Layers in Silicon

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