2010
DOI: 10.1109/lpt.2010.2047389
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Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18-$\mu$m CMOS Process

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Cited by 48 publications
(23 citation statements)
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“…2(a) is same with the nMOS structure in a P-substrate and then is referred to as the nMOS-type CMOS-APD. This structure was referred as the electron-injection-type CMOS-APD in our previous paper [13]. Due to the shorted GR, the photo-generated electrons in the P-substrate and DNW move toward n + -layers on the DNW because of the built-in potential barrier between the Pwell and the DNW, while photo-generated holes in the P-substrate move toward the p + -layers on the Psubstrate because of the built-in potential barrier between the P-substrate and the DNW, and photo-generated holes in the DNW move toward the p + -layer on the Pwell.…”
Section: Copyright Cmentioning
confidence: 99%
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“…2(a) is same with the nMOS structure in a P-substrate and then is referred to as the nMOS-type CMOS-APD. This structure was referred as the electron-injection-type CMOS-APD in our previous paper [13]. Due to the shorted GR, the photo-generated electrons in the P-substrate and DNW move toward n + -layers on the DNW because of the built-in potential barrier between the Pwell and the DNW, while photo-generated holes in the P-substrate move toward the p + -layers on the Psubstrate because of the built-in potential barrier between the P-substrate and the DNW, and photo-generated holes in the DNW move toward the p + -layer on the Pwell.…”
Section: Copyright Cmentioning
confidence: 99%
“…2(b) is same with the pMOS structure in a P-substrate and is referred to as the pMOStype CMOS-APD. This structure was referred as the holeinjection-type CMOS-APD in our previous paper [13]. The photo-generated electrons in the P-substrate move to the n + -layers on the Nwell, and the photo-generated holes move to the p + -layers on the P-substrate due to the built-in potential barrier between the P-substrate and the Nwell, and they are recombined and do not contribute to the photocurrent.…”
Section: Copyright Cmentioning
confidence: 99%
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“…Si PDs fabricated by complementary metal oxide semiconductor (CMOS) process are promising optical devices for easy integration with electronic circuits without any process modification, and avalanche photodiode fabricated by CMOS process (CMOS-APD) has been developed for optical interconnection applications [1]- [3]. We have studied CMOS-APDs with interdigital electrode structure for high-speed data transmission systems [4], [5] and for Bluray optical disc systems [6]. The CMOS-APDs with bandwidth over 1 GHz and the avalanche gain of more than 100 have been proposed and realized.…”
Section: Introductionmentioning
confidence: 99%
“…CMOS-PDs realized with standard CMOS technology are typically very slow due to slow diffusion photocurrents produced in the substrate as 850-nm light has much longer penetration depth than the narrow depletion regions possible in standard CMOS technology. Several approaches have been tried to overcome this limitation [17][18][19], [22][23][24][25][26][27]. Recently, a 10-Gb/s CMOS-Rx was reported with a high-speed spatially-modulated PD (SM-PD) [18].…”
Section: Introductionmentioning
confidence: 99%