Hole mass measurement in p-type InP and GaP by submillimetre cyclotron resonance in pulsed magnetic fields

Leotin, J.; Barbaste, R.; Askénazy, S.; Skolnick, M. S.; Stradling, R. A.; Tuchendler, J.

doi:10.1016/0038-1098(74)90242-7

Cited by 83 publications

(12 citation statements)

References 18 publications

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“…Compared with published Luttinger parameters we found the best agreement with the values of Leotin et al [13] and Cardona et al [14]. However, our parameters produce a little more anisotropy of the heavy hole effective masses.…”

supporting

confidence: 82%

Raman Scattering at Shallow Acceptors in InP

Irmer

Wenzel

Monecke

1998

phys. stat. sol. (b)

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Electronic Raman scattering was used to investigate excited states of shallow acceptors in Zn-and in Cd-doped p-type InP with acceptor concentrations in the range between 10 16 cm ± ±3 and 10 18 cm ± ±3 . Well resolved transition lines were obtained for acceptor concentrations of about 10 17 cm ± ±3 (Zn-doped) and 5 Â 10 17 cm ± ±3 (Cd-doped), at higher concentrations the levels merge into broad bands. A linear correlation between the normalized intensity of the electronic spectrum and the acceptor concentration was found. The measured acceptor energy levels were used to prove which sets of published Luttinger parameters g 1 , g 2 and g 3 are compatible with our results.

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supporting

confidence: 82%

Raman Scattering at Shallow Acceptors in InP

Irmer

Wenzel

Monecke

1998

phys. stat. sol. (b)

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“…193 We have taken longitudinal and transverse effective masses for the L-valley minimum from Levinshtein et al 11 The Luttinger parameters for GaP were first calculated by Lawaetz. 106 Subsequent cyclotron resonance experiments refined the masses along the ͓111͔ [196][197][198] and ͓100͔ 198 directions. Street and Senske also determined Luttinger parameters from acceptor binding energies.…”

Section: Gapmentioning

confidence: 99%

“…Averaging the results from different groups, we obtain m e *(Tϭ0) ϭ0.0795m 0 , which is slightly smaller than the typically recommended values of 0.080-0.081m 0 . 1,10 The effective masses for the L and X valleys are taken from Pitt, 213 although there is some controversy on this point and a different set of parameters was given by Levinshtein et al 11 Luttinger parameters for InP have been measured using cyclotron resonance, 198 magnetoreflectance, 109,226 the piezomodulated photovoltaic effect, 207 and magnetoabsorption. 227 Furthermore, the valence-band warping was accurately determined by Alekseev et al using hot-carrier photoluminescence, 228,229 and theoretical calculations have also been performed.…”

Section: F Inpmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,670

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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“…where J is the observed current density of the Schottky diode, m* (m* = 0.56m 0 , where m 0 is the hole mass) 30 is the effective hole mass, e (e = 11.1e 0 , where e 0 is the vacuum permittivity) is the dielectric constant of GaP, h is Planck's constant, N is the doping concentration, E 00 is the tunneling parameter, and n is the energy difference between E F and the valence band, (E F À E V )/q. E F is the position of the Fermi level, and E V is the valence-band maximum.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Song¹,

Kim²,

Kang³

et al. 2016

Journal of Elec Materi

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Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow-green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; U B ) on the work function of metals (U M ). In this work, SBHs and their dependence on U M at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dU B /dU M ) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at $0.85 eV above the valence-band edge.

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Hole mass measurement in p-type InP and GaP by submillimetre cyclotron resonance in pulsed magnetic fields

Cited by 83 publications

References 18 publications

Raman Scattering at Shallow Acceptors in InP

Raman Scattering at Shallow Acceptors in InP

Band parameters for III–V compound semiconductors and their alloys

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

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