Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers

Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition

“…It is known that, in contrast to the increasing drift mobility with increasing Ge content, the Hall mobility decreases 12,19,20 as the Ge content increases for a fixed doping range. The same trend is observed here in the case of partially strained SiGeC material, where C acts as a strain compensator to reduce the effective Ge concentration.…”

“…A comprehensive understanding of the effects of strain compensation on hole mobility is necessary for accurate device modeling and for an improved characterization of the transport properties of Si 1Ϫx Ge x /Si 1ϪxϪy Ge x C y . Though the transport properties of holes in strained SiGe have been reported by several authors, [12][13][14] few results are available on the effect of C-addition on the hole transport properties of strained ternary alloys. Chen et al 15 reported the electrical properties of ternary alloys having a very high Ge fraction ͑91%͒, which corresponds to a nonpseudomorphic film.…”

Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process

“…This may not be accurate for strained Si 1Àx Ge x . As a result, we developed a simple simulation approach based on the mobility model proposed by Carns et al [26]. They proposed a modified Arora model for mobility, in which some parameters are molefractiondependent, and fitted it to the experimental data.…”

Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation

“…Doping values for MC data and model are 10 15 , 10 17 , 3·10 18 , 3·10 19 and 10 21 cm -3 from top to bottom. Experimental data are from[12].…”