Holographic imaging and interferometry with non-Bragg diffraction orders on volume and surface-relief gratings in lithium niobate and photo-thermoplastic materials

Chalcogenide glassy semiconductors of the system As-Ss-S-Sn for X-ray imaging

“…The surface of the thermoplastic is charged with positive air ions, and the conductivity of the semiconductor layer in the irradiated areas is higher due to the change of resistivity under irradiation [23]. Positive charges on the surface and negative charges in the semiconductor layer deform the thermoplastic under the Coulomb interaction [10]. Thus, a reliefphase image of the registered object is formed [13].…”

“…The surface relief formation (mass-transport effect) in the glassy materials of the system As-Se-S under non-uniform illumination is presented in works [8][9]. The photo-thermoplastic carriers, based on As-Se-S-Sn, for real-time holography and interferometry [10] have high values of resolution power -up to 4000 mm -1 [11], diffraction efficiency -up to 40% [12], and the real-time of the image formation 1-3 s [13]. The As 2 S 3 thin films, as photoresists for x-ray photolithography, were studied in work [14].…”

Сhalcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging

“…According to the investigations presented in works [22][23], a change in the optical properties of CGS was found under the γ-radiation. The darkening in the layers of As-S was observed upon irradiation with hard γ-quanta (1,25 MeV) and at high radiation doses -up to 10 MGy [22][23].…”

“…The conductivity of the semiconductor layer in the irradiated areas is higher due to the change of resistivity under irradiation [16,19]. Positive charges on the surface and negative charges in the semiconductor layer deform the thermoplastic under the Coulomb interaction [1] and a relief-phase image of the registered object is formed [4].…”

“…A wide range of carriers and methods for recording optical information was developed and studied based on the chalcogenide glassy semiconductors (CGS) of the system As-Se-S. The photo-thermoplastic carriers, based on CGS, for real-time holography [1] have high values of resolution power -up to 4000mm -1 [2], diffraction efficiency -up to 40% [3], and the time of the image formation 1-3 s [4]. CGS are sensitive materials to electron-beam recording [5][6][7], photoinducted transformation (photodarkening, photorefraction) [8][9][10], and as photoresist materials sensitive in UV-visible regions [11].…”