Hot-Carrier Detrapping Mechanisms in MOS Devices

Abstract

Detrapping phenomena in stressed MOS devices are observed by monitoring electrical characteristics after a constant current stress is applied. The “see-saw” behavior of the density of interface states and the subsequent partial recovery of the threshold voltage give evidence that detrapping occurs in the capacitor and transistor. Threshold voltage reversal has two components, thermal recovery (TR) and field-assisted-recovery (FAR). These results suggest the occurrence of a degradation reversal which could be of importance in future device design.

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

“…The activation energy is a signature of the temperature dependency of the reaction. The recovery of a device is dependent if a bias opposite to the applied stress is applied [6]. In this work, the recovery in air without an applied bias is investigated as function of several anneal temperatures, T a .…”

Switching Properties Improvement of Tungsten-Doped Indium Oxide Phototransistor

“…Both the heterojunction and homojunction InWO TFTs exhibited a typical n-type channel TCO TFT behavior with excellent gate-to-channel controllability. Neither the shortchannel effect 13 nor the hot-carrier effect 14 were observed in the saturation region. In addition, the transfer curves (I D -V G ) with a drain-to-source bias of 8 V for the InWO TFTs are illustrated in Fig.…”

AC hot carrier effect of the thin-film silicon-on-insulator power n-MOSFET

“…18) The drain bias is 6.0 V. The degradation rate of R on has peaks near V th . 27) After that, the degradation rate of R on decreases with increasing gate voltage. This tendency occurs regardless of the channel length.…”