How far will silicon nanocrystals push the scaling limits of NVMs technologies?

Salvo, B. De; Gerardi, C.; Lombardo, S.; Baron, T.; Perniola, L.; Mariolle, D.; Mur, P.; Toffoli, A.; Gély, M.; Séméria, M. N.; Deleonibus, S.; Ammendola, G.; Ancarani, V.; Melanotte, M.; Bez, R.; Baldi, L.; Corso, D.; Crupi, I.; Puglisi, Rosaria A.; Nicotra, Giuseppe; Rimini, E.; Mazen, F.; Ghibaudo, G.; Pananakakis, G.; Compagnoni, Christian Monzio; Ielmini, Daniele; Lacaita, A.L.; Spinelli, A.S.; Wan, Yating; Jeugd, K. van der

doi:10.1109/iedm.2003.1269352

Cited by 70 publications

(64 citation statements)

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“…Note that despite numerous TEM (Transmission Electron Microscopy) analyses, the exact crystalline nature of the NDs could not be determined due to their nanometric size [25]. But all high resolution TEM of NDs deposited between 570 and 650 • C, show that NDs are crystalline [26]. This range of temperature was that of our whole runs.…”

Section: Operating Conditions Tested and Experimental Resultsmentioning

confidence: 97%

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cocheteau

Mur

Billon

et al. 2008

Chemical Engineering Journal

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Section: Operating Conditions Tested and Experimental Resultsmentioning

confidence: 97%

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cocheteau

Mur

Billon

et al. 2008

Chemical Engineering Journal

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“…According to our simulation process, these phenomena can be attributed to the fact that Young's modulus of Au is larger than that of Ag and Young's modulus for both Au and Ag is larger than that of SiO 2, but smaller than that of Al 2 O 3 . Recently, Campera et al [20] modelled the experimental data of De Salvo et al [21] and concluded that electrons are stored in defects in the nanocrystals/oxide interface. Our previous research has also demonstrated that the defects associated with the strained GaAs nanoparticles interfaces can capture charges and serve as charge storage centres, causing improvement in charge storage performance [3].…”

Section: Resultsmentioning

confidence: 99%

Matrix-Dependent Strain Distributions of Au and Ag Nanoparticles in a Metal-Oxide-Semiconductor-Based Nonvolatile Memory Device

Huang

Zhang

Wei

et al. 2015

Nanomaterials and Nanotechnology

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The matrix-dependent strain distributions of Au and Ag nanoparticles in a metal-oxide-semiconductor based nonvolatile memory device are investigated by finite element calculations. The simulation results clearly indicate that both Au and Ag nanoparticles incur compressive strain by high-k Al 2 O 3 and conventional SiO 2 dielectrics. The strain distribution of nanoparticles is closely related to the surrounding matrix. Nanoparticles embedded in different matrices experience different compressive stresses, which provide opportunities for tailoring the microstructure of Au and Ag nanoparticles. This opens up ways for exploring strain effects on physical properties and further tunes the charge storage properties of nanoparticles.

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“…In the field of non-volatile memory devices (NVM), replacing the traditional floating gate by silicon nanocrystals is a promising way to push the downscaling of these devices toward sub-100 nm technological nodes [1,3]. Using this technique, high density silicon nanocrystals, up to 10 12 cm À2 , are required to achieve a sufficient programming window and reduce electrical fluctuation from one device to the other [1,4,5].…”

Section: Introductionmentioning

confidence: 99%

“…Using this technique, high density silicon nanocrystals, up to 10 12 cm À2 , are required to achieve a sufficient programming window and reduce electrical fluctuation from one device to the other [1,4,5]. Recent papers have shown that using metallic dots can easily provide high-density 2D-arrays and maintain compatibility with standard CMOS technology [6,8].…”

Section: Introductionmentioning

confidence: 99%