Hybrid III-V/Silicon SOA in Optical Network Based on Advanced Modulation Formats

Kaspar, Peter; Valicourt, G. de; Brenot, R.; Mestre, M. A.; Jennevé, Philippe; Accard, A.; Make, D.; Lelarge, F.; Duan, Guang‐Hua; Pavarelli, Nicola; Rensing, Marc; Eason, Cormac; O’Brien, Peter; Olivier, S.; Malhouitre, Stéphane; Kopp, Christophe; Jany, Clement; Menezo, Sylvie

doi:10.1109/lpt.2015.2466543

Cited by 21 publications

(14 citation statements)

References 14 publications

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“…Both noise figures where determined for an input wavelength of 1575 nm. This NF is comparable to, but lower than, the on-chip noise figure (>10 dB) reported for a high-gain III-V-on-silicon amplifier [14].…”

Section: Dutsupporting

confidence: 53%

“…We chose to evaluate the on-chip NF instead of the external NF, as the amplifier was designed for implementation in a photonic circuit and not as a separate packaged device. However, if low-loss edge couplers would be used the amplifier could be envisioned to be used in a similar fashion as demonstrated in [14]. To determine the NF we use the OSA to measure the ASE for a given input power.…”

Section: Dutmentioning

confidence: 99%

“…In [13] III-V/Si SOA designs are presented where the wall-plug efficiency is optimized for 10 dB gain SOAs with 13 dBm of on-chip output power. A packaged III-V-on-silicon amplifier with 28 dB gain is demonstrated in [14], but the saturation power is not discussed and the highest mentioned on-chip output power is 12 dBm. More recently III-V-on-silicon SOAs using direct die-to-wafer bonding were fabricated with 14 dB gain and 16.8 dBm saturation power [15].…”

mentioning

confidence: 99%

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27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Gasse¹,

Wang²,

Roelkens³

2019

Opt. Express

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Hybrid III-V-on-silicon semiconductor optical amplifiers with high-gain and highoutput-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III-V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III-V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm 2 (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.

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Section: Dutsupporting

confidence: 53%

Section: Dutmentioning

confidence: 99%

mentioning

confidence: 99%

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27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Gasse¹,

Wang²,

Roelkens³

2019

Opt. Express

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“…2015年Kaspar等人 [19] 图 6 (网络版彩图)实验设计的器件的俯视图 (a)、第一截面图(b)和第二截面图(c) [18] Figure 6 (Color online) Top-view (a), first cross-sectional view (b) and second cross sectional view (c) of proposed device design [18].…”

Section: 间接键合的异质硅基Iii-v族半导体光放大器mentioning

confidence: 99%

“…图 7 (网络版彩图)异质SOA中用于在硅波导和III-V族材料波导中进行模式转移的锥形结构的顶视图和横截面视图, 对于3个示意性横截面给出了仿真模式分布 [19] Figure 7 (Color online) Top and cross-sectional views of the taper structure for mode transfer between III-V and silicon waveguides of the hybrid SOA. Simulated mode profiles are given for three exemplary cross-sections [19].…”

Section: 间接键合的异质硅基Iii-v族半导体光放大器mentioning

confidence: 99%

The latest research development of silicon based integrated optical waveguide amplifier

Chen¹,

Shu²,

Wang³

2017

Sci. Sin.-Phys. Mech. Astron.

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Research progresses of SOI optical waveguide devices and integrated optical switch matrix Science in China Series F-Information Sciences 48, 234 (2005); A two-stage amplifier of laser eavesdropping model based on waveguide fiber taper Defence Technology 15, 95 (2019); A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects SCIENCE CHINA Information Sciences 54, 1300 (2011); A 12×10 Gb/s fully integrated CMOS parallel optical receiver front-end amplifier array SCIENCE CHINA Information Sciences 55, 1415 (2012); Fabrication of silicon-based flexible optical waveguide by edge-cutting transfer technique

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Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Volet

Spott

Stanton

et al. 2017

Laser & Photonics Reviews

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A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics.

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Hybrid III-V/Silicon SOA in Optical Network Based on Advanced Modulation Formats

Cited by 21 publications

References 14 publications

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

The latest research development of silicon based integrated optical waveguide amplifier

Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

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