Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes

Steen, S.E.; McNab, Sharee J.; Šekarić, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M. J.; Fried, D.; Topol, Anna W.; Brancaccio, J.; Yu, Roy; Hergenrother, John M.; Doyle, J. P.; Nunes, R.; Viswanathan, R.; Purushothaman, S.; Rothwell, Mary Beth

doi:10.1016/j.mee.2006.01.181

Cited by 18 publications

(12 citation statements)

References 7 publications

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“…[14][15][16] For a unidirectional layout of metal wires, in order to achieve the circuit connectivity, some parts of the lines should be blocked or cut when printing the unidirectional lines using a selfaligned double patterning or other lithography techniques. For patterns which cannot be resolved by wire extension, they will be marked or be printed by an alternative lithography technique, such as e-beam, 19,20 or an additional 193i cut mask. The cut mask can be optimized via an end-cutting approach [see Fig.…”

Section: End-cutting Processmentioning

confidence: 99%

Directed self-assembly cut mask assignment for unidirectional design

Gao

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Recently, directed self-assembly (DSA) has emerged as a promising lithography solution for cut manufacturing. We perform a comprehensive study on the DSA aware mask optimization problem to provide a DSA friendly design on cut layers. We first formulate the problem as an integer linear programming (ILP) to assign cuts to different guiding templates, targeting both conflict minimization and line-end extension minimization. As ILP may not be scalable for very large size problems, we then propose two speed-up strategies. The first one is to decompose the initial problem into smaller ones and solve them separately, followed by solution merging without much loss of quality. The second one is using the set cover algorithm to decide the DSA guiding pattern assignment, and then legalize the template placement. Our approaches can be naturally extended to handle arbitrary DSA guiding template patterns with complicated shapes. Experimental results show that our methodologies can significantly improve the DSA friendly, i.e., both the unresolved pattern number and the lineend extensions can be reduced.

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Section: End-cutting Processmentioning

confidence: 99%

Directed self-assembly cut mask assignment for unidirectional design

Gao

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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“…The DTL/SHL is proven useful as it benefits from the best aspects of two lithography techniques, e.g., resolution, rapidness, pattern-ability, and cost-effectiveness, and a single mask layer. 57,58 Such assets are important to the field of nanoelectronics, 59 nanosensing, [60][61][62] and nanofluidics. 63,64 Our DTL/SHL method employs a single photoresist and two exposure techniques to generate a nanopatterned photoresist and bottom anti-reflective coating (BARC) in the form of nanopillar-like structures at particular substrate locations.…”

Section: Introductionmentioning

confidence: 99%

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars

et al. 2021

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“…This is an example of complementary or hybrid lithography [7,8,9]. In this paper, we assume variable-shaped beam (VSB) method [10] is used in e-beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Throughput Optimization for SADP and E-beam based Manufacturing of 1D Layout

Ding

Chu

Mak

2014

Proceedings of the 51st Annual Design Automation Conference

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Due to the resolution limitations of optical lithography equipment, 1D gridded layout design is gaining steam. Self-aligned double patterning (SADP) is a mature technology for printing 1D layouts. However, for 20nm and beyond, SADP using a single trim mask becomes insufficient for printing all 1D layouts. A viable solution is to complement SADP with ebeam lithography. In this paper, in order to increase the throughput of printing a 1D layout, we consider the problem of e-beam shot count minimization subject to bounded line end extension constraints. Two different approaches of utilizing the trim mask and e-beam to print a layout are considered. The first approach is under the assumption that the trim mask and e-beam are used for end cutting. The second is under the assumption that the trim mask and e-beam are used to rid of all unnecessary portions. We propose elegant ILP formulations for both approaches. Experimental results show that both ILP formulations can be solved efficiently. The pros and cons of the two approaches for manufacturing 1D layout are discussed.

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Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes

Cited by 18 publications

References 7 publications

Directed self-assembly cut mask assignment for unidirectional design

Directed self-assembly cut mask assignment for unidirectional design

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars

Throughput Optimization for SADP and E-beam based Manufacturing of 1D Layout

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