Hydrogen-implant-induced polarization loss and recovery in IrO2∕Pb(Zr,Ti)O3∕Pt capacitors

Abstract

Hydrogen was implanted into IrO2 (200nm)∕Pb(Zr,Ti)O3∕Pt thin film capacitors at 26keV with a flux of 2×1015H+ions∕cm2 and also implanted at 20keV with a flux of 1×1015H+ions∕cm2 into IrO2 (50nm)∕Pb(Zr,Ti)O3∕Pt. The implanted samples showed a net loss in polarization of 20μC∕cm2 as a result of the hydrogen implant and the hysteresis loop was severely distorted. Transmission electron microscopy cross-sectional images and microdiffraction patterns showed no physical damage in the Pb(Zr,Ti)O3 after implanting. Secondary ion mass spectroscopy (SIMS) analysis revealed that a maximum concentration of H of 4×1020atom∕cm3 after implantation. Permittivity measurements also showed a decrease after implantation of 20% or more. After annealing the implanted samples in air at 350°C for 5min the remanent polarization loop and dielectric properties were restored. SRIM-2003 software simulation of the implanted hydrogen revealed that 1% oxygen vacancies are created by implanting using these implant conditions. In addition, hydrogen implanted in the Pb(Zr,Ti)O3 lattice can inhibit the switching of Ti∕Zr by binding with oxygen. The recovery at 350°C indicates that the polarization decrease created by hydrogen implantation is relatively minor and suggests that the degradation mechanism is due to implanted hydrogen in the Pb(Zr,Ti)O3 films.

Crystal Growth and Ferroelectric Properties of BaTiO3 Thin Films Deposited on Si Substrate by Low Energy Ion Beam Assisted Deposition Technique

“…The shapes of the P-E hysterisis loops were slim and showed incomplete saturation. The similar P-E hysteresis loops has been reported for BaTi0 3 films consisting of nonferroelectric layers [15], Pb(Zr, Ti)0 3 films [16,17] and BiSc0 3 films [18]. The polarization value of 100 eV-deposited Ba-Ti-0 film was maximum in this experiment because the film consisted of BaTi0 3 crystallites with the lattice constants given in a powder diffraction file [13].…”

Engineering of the frequency dependence of the ferroelectric properties of thin film Pt/Ba0.5Sr0.5TiO3/Pt structures

“…Recently, high-k dielectric and ferroelectric perovskite-type titanates, such as (Ba,Sr)TiO 3 (BSTO) and Pb(Zr,Ti)O 3 , have been studied extensively due to possible application in voltage-tunable capacitors, integrated passive devices, and nonvolatile memories [1][2][3] and [4]. With regards to practical implementation thin film applications are of special interest that consist of a parallel plate arrangement, i.e.…”

Tuning the Ferroelectric and Piezoelectric Properties of 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 Single Crystals and Lead Zirconate Titanate Ceramics by Doping Hydrogen

“…Ferroelectric (1 − x )Pb(Zn 1/3 Nb 2/3 )O 3 - x PbTiO 3 (PZNT) single crystals show exceptional properties such as high electromechanical coupling coefficients, high piezoelectric constants, and high dielectric constants at compositions near the morphotropic phase boundary (MPB). − Because of these exceptional properties, they have wide applications in modern technologies, such as in voltage generators, transducers, sensors, filters, etc . Similarly, ferroelectric Pb(Zr,Ti)O 3 (PZT) materials possess excellent material properties and are extensively used in the ferroelectric random access memory (FRAM). − In cutting-edge technology applications of ferroelectric materials, remanent polarization and piezoelectric constants are the most important ferroelectric and piezoelectric properties, which are crucial in the stored charge density of FRAM and in the conversion efficiency of transducers. That is why various technologies such as doping noble metallic elements, increasing the orientation, etc., have been developed to improve the polarization and piezoelectric constant of ferroelectric materials. , These methods, however, are limited in their usefulness.…”

“…7 Similarly, ferroelectric Pb(Zr,Ti)O 3 (PZT) materials possess excellent material properties and are extensively used in the ferroelectric random access memory (FRAM). [8][9][10][11][12][13] In cuttingedge technology applications of ferroelectric materials, remanent polarization and piezoelectric constants are the most important ferroelectric and piezoelectric properties, which are crucial in the stored charge density of FRAM and in the conversion efficiency of transducers. That is why various technologies such as doping noble metallic elements, increasing the orientation, etc., have been developed to improve the polarization and piezoelectric constant of ferroelectric materials.…”