Hydrogen in crystalline semiconductors

Pearton, S. J.; Corbett, J. W.; Shi, Tiansheng

doi:10.1007/bf00615975

Cited by 952 publications

(241 citation statements)

References 175 publications

Supporting

Mentioning

227

Contrasting

Unclassified

Order By: Relevance

“…Because of the high mobility and reactivity of hydrogen, a progressive aggregation with irradiation-induced defects occurs even at RT. 55 Hydrogen is known to modify the electrical properties of point defects and ultimately, full passivation may occur. By means of DLTS, it is possible to follow the evolution of these phenomena, e.g., the transformation of VO to VOH.…”

Section: B Vo Centermentioning

confidence: 99%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

View full text Add to dashboard Cite

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28 Si ions to a dose of 2ϫ10 8 cm Ϫ2 and then annealed at temperatures from 100 to 380°C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers were studied in detail using deep-level transient spectroscopy. The decrease of V 2 centers exhibits first-order kinetics in both Czochralski-grown ͑CZ͒ and float-zone ͑FZ͒ samples, and the data provide strong evidence for a process involving migration of V 2 and subsequent annihilation at trapping centers. The migration energy extracted for V 2 is ϳ1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length р0.1 m is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ͑H͒ plays a key role through the formation of VOH and VOH 2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ϳ1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

show abstract

Section: B Vo Centermentioning

confidence: 99%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

View full text Add to dashboard Cite

show abstract

“…On the other hand, hydrogen is stable in its positive charge state in p-type silicon and in a neutral or negative charge state in n-type silicon. 13 Since the STDH formation rate in p-type silicon is found to be higher than in n-type silicon, it is reasonable to speculate that the C i O i complex prefers to take the negative charge state. Moreover, a possible role of the introduction rate of hydrogen during the plasma exposure in the STDH formation rate cannot be ruled out.…”

mentioning

confidence: 99%

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Huang

Simoen

Claeys

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

In this work, the formation of donors in n-type high resistivity magnetic Czochralski-grown silicon wafers, directly exposed to a hydrogen plasma, is investigated by a combination of capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. C-V analysis demonstrates diffusionlike concentration profiles close to the surface, pointing to the formation of hydrogen-related shallow donors in silicon during the hydrogenation. In addition, oxygen thermal donors are created during a subsequent annealing (20min) performed at 350–450°C, as demonstrated by DLTS. It is shown that the hydrogen-related shallow donors are the dominant donors in as-hydrogenated samples, while hydrogen acts as a catalyst during the formation of oxygen thermal donors in the temperature range of 350–450°C. It is finally shown that the formation of both kinds of donors is Fermi-level dependent.

show abstract

“…Standard semiconductor processing, such as mechanical polishing, HF etching, plasma treatments etc, can result in far higher levels of hydrogen close to the surface 215 . Several studies have found values as high as 10 18 molecules per cubic centimetre and drops significantly after a depth of one micron 225 .…”

Section: Hydrogenmentioning

confidence: 99%

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Rushton

Aldous

Himsworth

2014

Review of Scientific Instruments

107

View full text Add to dashboard Cite

Experiments using laser cooled atoms and ions show real promise for practical applications in quantumenhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed microlitre system capable of maintaining 10 −10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.PACS numbers: 07.07.Df, 37.10.Gh, 07.30.Kf, I. ULTRACOLD QUANTUM TECHNOLOGYSince the first demonstrations of atoms and ions at sub-millikelvin temperatures in the mid-1980s, the field of atomic physics has been revolutionized by laser cooling and trapping as it provides researchers with a method to probe some of the purest and sensitive quantum systems available. This field is still highly productive and recently has put significant emphasis on the practical applications of this technology beyond the laboratory 1,2 . It was evident very early on that ultracold matter would be an indispensable tool in precise timing applications and a recent demonstration 3 has shown extremely low instabilities at the 10 −18 level. The wavelike nature of atoms as they are cooled to lower temperatures can be used to form atomic interferometers that outperform optical counterparts in measurements of accelerated reference frames 4-7 , which are important for inertial guidance systems, but can also provide sensitive measurements of mass, charge and magnetic fields [8][9][10][11] . Greater sensitivity beyond the classical limit is possible via squeezed 12 and entangled states 13-15 , which are also fundamental attributes for quantum computing 16,17 , and long distance quantum networking 18 . Ultracold matter has been used in the emerging field of quantum simulation 19 and is an indispensable tool in determining fundamental constants 20 , testing general relativity 21 and defining measurement standards 22 . Many researchers and industries believe such tools will be a major part of the 'second quantum revolution' in which the more 'exotic' properties of quantum physics are applied for practical applications 23,24 .The field of ultracold matter has reached a matua) m.d.himsworth@soton.ac.uk rity in both experimental methods and theoretical understanding allowing experiments to begin leaving the laboratory 25-27 . These systems are bespoke, rarely take up a ...

show abstract

Hydrogen in crystalline semiconductors

Cited by 952 publications

References 175 publications

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Contact Info

Product

Resources

About