Hydrogen in semi-insulating polycrystalline silicon films

Abstract

Infrared (IR) spectroscopy, nuclear reaction analysis (NRA), and Rutherford backscattering (RBS) were used on semi-insulating polycrystalline silicon (SIPOS) films deposited at atmospheric pressure (AP) and low pressure (LP) to determine film composition and hydrogen content. The amount of hydrogen in SIPOS ranges from less than 0.1 at. % H for films annealed in nitrogen at 800 °C for 30 min to 11 at. % H for higher oxygen content LP SIPOS films. For AP SIPOS films, the H content is directly proportional to the O content of the film and is uniformly distributed with depth into the SIPOS film. Based on the absorption cross section, the narrow, very weak 2270-cm−1 peak in the IR is identified as the Si-H absorption. The higher oxygen content LP SIPOS film contains additional H not bound as Si-H. The IR, NRA, and RBS data are interpreted in terms of a structural model involving Si-H and Si-O where the O is nonbridging. The 865-cm−1 peak in the IR is believed due to this nonbridging O-Si interaction.

Surface Oxidation and Luminescence Properties of Weblike Agglomeration of Silicon Nanocrystals Produced by a Laser Vaporization−Controlled Condensation Technique

“…These peak shifts are strongly related to both the oxygen content and the thickness of the SiO x oxide layer. It has been shown both experimentally and by theoretical analysis that the thicker the SiO 2 oxidation layer or the higher the oxygen content of the SiO x layer, the higher the frequency of the Si−O−Si stretching and rocking vibrations. ,,, The disappearance of the 880 cm -1 peak at higher O 2 partial pressure (more than 20 Torr in our experiments) is consistent with the assignment of Knolle and Maxwell, who attributed this peak to the interaction between core Si and nonbridging O atoms in the SiO 2 layers . Oxidation eliminates the nonbonding Si atoms and thus weakens the interaction between Si and nonbridging O atoms.…”

“…Previous studies have attributed this feature to various sources: (1) to a Si 2 O 3 phase within the amorphous Si film; (2) to the combination of Si−(O 2 Si 2 ), Si−(O 3 Si), and Si−(O 4 ) structures; (3) to the Si−N bond; and to the motion of the nonbridging Si−O bonds or change in the Si−O−Si angle . In addition, Knolle and Maxwell, from both experimental and theoretical analysis, assign the 880 cm -1 peak to the interaction between Si and nonbridging O atoms in SiO 2 …”

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

“…The ability to qualitatively fingerprint and quantitatively measure the concentration of various chemical bonds by this technique has further led to the use of FTIR spectroscopy in numerous practical applications ranging from monitoring greenhouse gas emissions to quality control in manufacturing processes [1][2][3][4]. Within the semiconductor micro/nano-electronics industry, FTIR has also been utilized for quantitative measurements of a variety of materials of interest to the industry including: a-Si:H [5][6][7][8][9][10][11][12][13], a-SiO 2 [14][15][16][17][18][19], a-SiN x :H [20][21][22][23][24][25][26][27], a-SiC x :H [28][29][30][31][32][33][34][35][36], and a-C:H [37][38][39][40][41][42][43][44][45]. In these studies, FTIR has been utilized to determine the concentration of both terminal hydrogen bonding (Si-H, C-H, O-H, N-H) …”

Compositional and electrical properties of Si metal–oxide–semiconductor structure prepared by direct photoenhanced chemical vapor deposition using a deuterium lamp

“…The infrared spectra of amorphous silicon dioxide exhibit three principal transmission minima ͑transverse optical modes͒: the rocking mode near 460 cm Ϫ1 , the bending vibration at 808 cm Ϫ1 , and the asymmetric stretching mode ͑ASM͒ at about 1075 cm Ϫ1 . 27,28 These were variously attributed to Si 2 O 3 bonding unit, 29,30 to Si-H wagging vibration shifted toward higher energies by the vicinity of polar Si-O backbonds, 31 and nonbridging oxygen near a Si-H bond. 3.…”