Hydrogen-Induced Platelets in Silicon: Separation of Nucleation and Growth

Johnson, N. M.; Herring, Conyers; Doland, C.; Walker, J.; Anderson, G. B.; Ponce, Fernando

doi:10.4028/www.scientific.net/msf.83-87.33

Cited by 37 publications

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“…This is consistent with previous observations, which indicated that platelet formation occurs only in undoped an n-type poly-Si [11]. Platelets arise from the coordination formation of Si-H bonds [12,13]. Efficient dangling bond passivation is commonly achieved by exposing poly-Si to a hydrogen plasma.…”

Section: Methodssupporting

confidence: 80%

Influence of laser crystallization on hydrogen bonding in poly‐Si

Nickel

Maydell

2008

Phys. Status Solidi (c)

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We investigate the influence of the hydrogen content in the amorphous starting material on hydrogen bonding and defect passivation in laser crystallized poly‐Si using electron‐spin‐resonance and hydrogen effusion measurements. After laser dehydrogenation and crystallization the specimens contain a residual H concentration of 8×1021 cm–3 to 1.5×1022 cm–3. During a vacuum anneal at least 1.5×1021 cm–3 H atoms are mobile in the lattice, however, only about 3.7×1018 cm–3 H atoms passivate Si dangling‐bonds. Our results show that the annealing treatment can cause the vast majority of H atoms to accumulate in H stabilized platelets. Since defect passivation preferentially occurs at grain boundaries and platelet nucleation and growth is confined to the interior of single crystal grains, H equilibration is governed by two spatially separated processes. Moreover, our data demonstrate that the hydrogen density‐of‐states distribution derived from H effusion data is dynamic and changes in response to experimental parameters. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodssupporting

confidence: 80%

Influence of laser crystallization on hydrogen bonding in poly‐Si

Nickel

Maydell

2008

Phys. Status Solidi (c)

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“…The nucleation of ͕111͖ platelets during hydrogenation of Si was discussed by Johnson et al 18 where the nucleation FIG. 2.…”

Section: Tamzin Laffordmentioning

confidence: 99%

Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Nastasi

Höchbauer

Lee

et al. 2005

Applied Physics Letters

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H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum.

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“…However, platelets nucleated at lower temperatures grow markedly at higher temperatures. 5 Raman measurements showed that the added H atoms are bound to Si atoms suggesting that platelets are a consequence of the coordination formation of Si-H bonds driven by strain. In addition to structural changes of the lattice, platelet formation is accompanied by the generation of electrically active gap states.…”

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confidence: 99%

Nucleation of hydrogen-induced platelets in silicon

et al. 2000

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Hydrogen-induced platelet generation in single-crystal silicon was investigated as a function of the Fermi energy. Platelet formation is observed only for Fermi-level positions of E C ϪE F р0.3 eV. With decreasing E C ϪE F the platelet density increases monotonically to 2.45ϫ10 17 cm Ϫ3 . Experiments performed on electrically compensated silicon demonstrate that the formation of hydrogen-induced platelets is solely controlled by the Fermi energy.

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Hydrogen-Induced Platelets in Silicon: Separation of Nucleation and Growth

Cited by 37 publications

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Influence of laser crystallization on hydrogen bonding in poly‐Si

Influence of laser crystallization on hydrogen bonding in poly‐Si

Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Nucleation of hydrogen-induced platelets in silicon

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