Hydrogenated amorphous-silicon thin-film transistor structure with buried field plate

Abstract

A new hydrogenated amorphous silicon (a-Si:H) thirl film transistor (TFT) structure containing an extra field plax under the gate electrode is proposed. In this a-Si:H TF r, even at the high drain-to-source (VDs) and gate-tosoL:ie (VGS) voltages, a low OFF-current and a high ON'OFF-current ratio can be achieved by alleviating a high electric field at the drain electrode edge. It is expected that this a-Si:H TFT structure can be used for active-matrix reflective cholesteric liquid-crystal displays that require high data and gate driving voltages.