Hydrogenating Effect of Single-Crystal Diamond Surface

Abstract

Hydrogenation of diamond has been carried out using the electron-cyclotron-resonance microwave plasma chemical-vapor deposition apparatus. According to reflection high-energy and low-energy electron diffraction and X-ray photoelectron spectroscopy measurements, the natural- and synthetic-diamond surfaces maintained their crystallinity even after the hydrogenation. Seebeck effect measurement and the temperature dependence of the resistance revealed an appearance of deep acceptor levels in the hydrogenated diamond layer. The diffusion depth of the hydrogen by the plasma treatment (2 h, 830°C) was roughly estimated to be ∼0.6 µm from the drain current-voltage characteristics of a rudimentary MISFET using the hydrogenated diamond.

Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

“…Furthermore, H-terminated diamond is also attractive for electrical applications because it induces p-type surface conduction even in undoped diamond [9][10][11]. Recently, our group has demonstrated the fabrication and the operation of field-effect transistors (FETs) using a surface conductive layer, and has obtained high transconductance [12,13].…”

CVD diamond—Research, applications, and challenges

“…20 This led to much application-driven work, mostly focused on planar structures, like Schottky contacts and metal-semiconductor fi eld-effect transistors. 21 , 22 A more general surface transfer model was introduced 23 that noted the subsurface hole accumulation layer was governed by electrochemical charge transfer between diamond and adsorbates.…”

Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch

“…On the other hand, the high SC of state B indicates P-type semiconductor characteristics [32], which leads to upward band bending in the surface region to align the Fermi-leve because the bulk IIa diamond is intrinsic type, that likely prevents free electrons from being emitted through the NEA surfaces [23,32]. Note that even the bulk is lightly doped P-type semiconductor cases, there must be upward band bending with high SC because of very high concentration of holes in the SC layer at least with more than 10 18 cm −3 [16,17,22,23], which leads the Fermi-level closed to the top of valence band edge, while the lightly doped P-type diamond shows the Fermi-level about 0.3 eV above the valence band edge.…”