This study reports the electrical transport and the field emission properties of individual multi‐walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and mechanical stress. Electron beam irradiation is used to reduce the nanotube‐electrode contact resistance by one‐order of magnitude. The field emission capability of single WS2 NTs is investigated, and a field emission current density as high as 600 kA cm−2 is attained with a turn‐on field of ≈100 V μm−1 and field‐enhancement factor ≈50. Moreover, the electrical behavior of individual WS2 NTs is studied under the application of longitudinal tensile stress. An exponential increase of the nanotube resistivity with tensile strain is demonstrated up to a recorded elongation of 12%, thereby making WS2 NTs suitable for piezoresistive strain sensor applications.