2016
DOI: 10.1109/ted.2015.2471808
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III–V Tunnel FET Model With Closed-Form Analytical Solution

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Cited by 38 publications
(17 citation statements)
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“…It can be seen from the figure that as t f increases, l sp decreases approximately linearly and G t,max increases nearly exponentially. In addition, I ds is proportional to G t,max , I ds ∝2πqRL g G t,max [30] [31]. To compare G t,max from the analytical model with I ds from the numerical simulation, both I ds and G t,max are normalized for different gate voltages.…”
Section: Working Principle Of Nc-gaa-tfetsmentioning
confidence: 99%
“…It can be seen from the figure that as t f increases, l sp decreases approximately linearly and G t,max increases nearly exponentially. In addition, I ds is proportional to G t,max , I ds ∝2πqRL g G t,max [30] [31]. To compare G t,max from the analytical model with I ds from the numerical simulation, both I ds and G t,max are normalized for different gate voltages.…”
Section: Working Principle Of Nc-gaa-tfetsmentioning
confidence: 99%
“…In this respect, low bandgap semiconductors, such as InAs [12] and Mg2Si [13], have been utilized. Such materials demonstrated higher tunneling rates than those in silicon because of their small bandgap, leading to a higher ON/OFF current ratio [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…Significant advances in analytical modelling of TFETs have already been demonstrated by various researchers [9][10][11]. Most of them are based on the solution of Poisson's equation in the device and estimation of the tunnelling current using Kane's/WKB approach.…”
Section: Introductionmentioning
confidence: 99%