Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

Buh, G. H.; Chung, Hyun‐Jong; Kim, C. K.; Yi, J. H.; Yoon, I. T.; Kuk, Young

doi:10.1063/1.126892

Cited by 49 publications

(22 citation statements)

References 11 publications

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“…Surface-potential differences between the KPFM results and theoretical expectations were ascribed to the presence of oxide charges with a density of ∼ 10 11 cm -2 . [50] Surface-state pinning did not prevent KPFM measurements on p-n junctions, while the removal of adsorbed water improved the resolution. [51] Another very interesting application of KPFM has been the measurement of minority-carrier diffusion length in conventional semiconductors.…”

Section: Kpfm Of Conventional Inorganic Materialsmentioning

confidence: 97%

Electronic Characterization of Organic Thin Films by Kelvin Probe Force Microscopy

2006

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This review highlights the potential of Kelvin probe force microscopy (KPFM) beyond imaging to simultaneously study structural and electronic properties of functional surfaces and interfaces. This is of paramount importance since it is well established that a solid surface possesses different properties than the bulk material. The versatility of the technique allows one to carry out investigations in a non‐invasive way for different environmental conditions and sample types with resolutions of a few nanometers and some millivolts. KPFM can be used to acquire a wide knowledge of the overall electronic and electrical behavior of a sample surface. Moreover, by KPFM it is possible to study complex electronic phenomena in supramolecular engineered systems and devices. The combination of such a methodology with external stimuli, e.g., light irradiation, opens new doors to the exploration of processes occurring in nature or in artificial complex architectures. Therefore, KPFM is an extremely powerful technique that permits the unraveling of electronic (dynamic) properties of materials, enabling the optimization of the design and performance of new devices based on organic‐semiconductor nanoarchitectures.

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Section: Kpfm Of Conventional Inorganic Materialsmentioning

confidence: 97%

Electronic Characterization of Organic Thin Films by Kelvin Probe Force Microscopy

2006

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“…SCM images have been used to extract twodimensional ͑2D͒ carrier profiles [1][2][3][4] and to locate electrical p-n junctions. [5][6][7] SCM images of actively biased crosssectional metal-oxide-semiconductor ͑MOS͒ field-effect transistors 8,9 and of operating pn junctions 10 have allowed one to visualize the operation of the semiconductor devices. Scanning capacitance spectroscopy ͑SCS͒ is an extension of SCM where both C -V and differential capacitance versus voltage (⌬C/⌬V versus V) characteristics are measured.…”

Section: Introductionmentioning

confidence: 99%

Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope

Buh

Kopanski

Marchiando

et al. 2003

Journal of Applied Physics

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A scanning capacitance microscope (SCM) can measure the local capacitance–voltage (C–V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe tip and a doped semiconductor sample. A common realization of the SCM depends on a parallel atomic force microscope, which includes a laser focused on the end of the cantilever to monitor the position of the probe tip. In this configuration, it is found that the stray light from the laser can dramatically affect the measured C–V curve. The difference between the SCM C–V curves measured in this high stray light condition and those measured in the true dark condition are shown and discussed. Also discussed is the distortion of the measured C–V curves caused by the SCM method of measuring the differential capacitance using a capacitance-modulating ac voltage and a lock-in amplifier. After reducing and accounting for these effects, the SCM C–V curves show markedly different behavior from that of conventional one-dimensional C–V curves. The measured C–V curves are stretched out in voltage and have a larger |dC/dV| signal in the depletion and the inversion regions, as compared to the conventional one-dimensional C–V curve. The measured C–V curves are compared with the results of three-dimensional calculations for different values of the probe-tip size.

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“…Quantitative reproducible measurements are a serious problem, since sample preparation has a dramatic influence on the results, especially in cross sectional measurements. [5][6][7][8][9][10][11] In addition to these technical problems, the physical processes leading to contrast in SCM images are not fully understood. Recently, the influence of the applied dc bias 12 was studied qualitatively and a nonmonotonic behavior of the SCM signal for large dynamic range samples was observed.…”

mentioning

confidence: 99%

Mechanism of bias-dependent contrast in scanning-capacitance-microscopy images

Smoliner

Basnar

Golka

et al. 2001

Applied Physics Letters

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Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

Cited by 49 publications

References 11 publications

Electronic Characterization of Organic Thin Films by Kelvin Probe Force Microscopy

Electronic Characterization of Organic Thin Films by Kelvin Probe Force Microscopy

Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope

Mechanism of bias-dependent contrast in scanning-capacitance-microscopy images

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