Imaging setup for temperature, topography, and surface displacement measurements of microelectronic devices

Abstract

We present an imaging system that enables the extraction of three different types of information: First, the topography measurement of an electronic device at rest; then, two other informations are obtained when the same device is submitted to a transient current: on one hand, the induced surface displacement and on the other hand, the qualitative surface temperature variations field. The same bench includes two imaging techniques, one based upon interferometry, the other upon thermoreflectance, both of them using a light-emitting diode as a source of light. Results on a microheater are presented.

Thermal exchange radius measurement: Application to nanowire thermal imaging

“…Hence, there is a need of techniques able to reach a nanometric lateral spatial resolution. Optical methods such as infrared thermometry, 1,2 visible thermoreflectance, [3][4][5] or interferometry, 5,6 which are diffraction limited, cannot reach such a resolution. Since its invention in 1986, the scanning thermal microscopy ͑SThM͒ 7 is presented as the most efficient technique to study thermal transport in nano-objects and nanomaterials.…”

Joule expansion imaging techniques on microlectronic devices

“…Moreover, a thermocouple implies a contact with the sample that can damage it or disrupt its functioning. Among the optical methods for submicronic thermal mapping, thermoreflectance [3][4][5][6][7][8] is a useful non contact and non invasive method which presents a good spatial resolution as limited by diffraction to the order of magnitude of the illuminating wavelength. Nevertheless, when studying structures as thin as a few hundreds nanometers, only a Scanning Thermal Microscope (STHM) [9][10][11][12] can theoretically reach temperature variations measurements at this scale.…”

Mechanical properties of anodic aluminum oxide for microelectromechanical system applications

“…13 When a thin film structure under stress is released by removing the underlying silicon, the residual stress in this structure is relaxed and is converted into a measurable increase or a decrease of the structure dimensions. 18,19 Since we expect tensile residual stress in our anodic aluminum oxide, we designed structures transforming the tensile stress into a compressive stress, which could lead to a measurable deformation or strain. Microscopic interferometry 17 is a sensitive technique for detecting small buckling.…”