Impact of Negative Capacitance Field-Effect Transistor (NCFET) on Many-Core Systems

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

“…The NC-FET is one of the promising emerging technologies that may be able to overcome the fundamental limits of conventional CMOS technology. − The NC-FET features a ferroelectric layer within the gate of the metal-oxide semiconductor FET (MOSFET), which internally amplifies the voltage, allowing NC-FET to operate at a lower voltage while sustaining performance at considerable energy savings. For power consumption, self heating, and consideration of the CMOS’s scaling at the last term of Moore’s law, it will be not surprising that once again scientists are finding out a new more scalable and energy-efficient replacement, e.g., tunnel FETs, nanoelectromechanical FETs, spin FETs, and phase FETs .…”