2017
DOI: 10.1021/acs.jpcc.7b02218
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Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids

Abstract: Temperature-dependent photoluminescence (PL) of titanium oxide (TiO2) shows an evolution of blue emission when exposed to 50 keV Ar+ ions. The origin of observed PL has been examined by X-ray absorption near-edge spectroscopy (XANES) at Ti-K,L and O-K edges, revealing the reduction of ligand field splitting owing to the formation of oxygen vacancies (OVs) by destroying TiO6 octahedral symmetry. Detailed PL and XANES analyses suggest that the fluence (ions/cm2) dependent increase in OVs not only boosts the cond… Show more

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Cited by 48 publications
(41 citation statements)
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“…Emission band at 485 nm is ascribed to charge transfer from Ti 3+ to oxygen anion in a TiO 6 8− complex . All possible decay processes related to PL spectrum are illustrated in Scheme and are consistent with previous results …”
Section: Resultssupporting
confidence: 90%
“…Emission band at 485 nm is ascribed to charge transfer from Ti 3+ to oxygen anion in a TiO 6 8− complex . All possible decay processes related to PL spectrum are illustrated in Scheme and are consistent with previous results …”
Section: Resultssupporting
confidence: 90%
“…It is reported that the intrinsic transfer carriers in anatase can be excited with a light energy greater than 3.2 eV, which is consistent with the results shown in Figure b. Multiple PL signals in the blue‐light region centered at about 466 nm can be observed for all anatase TiO 2 samples; this can be attributed to localized defect states below the minimum of the conduction band (CB), such as V O s in the band gap . In this study, these defects can be assigned to lattice disorder and V O s located at the intergrain boundaries.…”
Section: Resultssupporting
confidence: 76%
“…These defect states, in general, are located below the lowest end of the CB at 0–1 eV, which can facilitate the transfer of carriers from these defect states to the CB . The green emission band at around 561 nm (2.21 eV) can be assigned to the recombination of trapped holes and oxygen molecules chemisorbed at V O s, or the recombination of electrons in the V O ‐related luminescence center to the holes in the valence band (VB), as confirmed by EPR spectroscopy (Figure S1 in the Supporting Information) . The EPR signal at g =2.005 can be attributed to surface defects, such as V O s with one positive charge .…”
Section: Resultsmentioning
confidence: 67%
“…In contrast, the spectral shape of the normalized UV band attributed to STEs is virtually unchanged as evidenced from the invariance of the highenergy side of the UV peak with increasing temperature. The temperature independence of the spectral shape of the UV band is commonly observed for excitons immobilized by a local deformation of the crystal lattice because the energy of a STE emission critically depends on the distortion energy of self-trapped holes and is only weakly influenced by the bandedge energies [20,21]. The overall CL spectrum of Ga 2 O 3 is slightly redshifted from 3.45 eV at 10 K to 3.28 eV at 360 K due to the overlap with the enhanced BL emission relative to the UV peak.…”
Section: Resultsmentioning
confidence: 99%