Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

Giannazzo, Filippo; Greco, Giuseppe; Franco, Salvatore Di; Fiorenza, Patrick; Deretzis, Ioannis; Magna, Antonino La; Bongiorno, Corrado; Zimbone, Massimo; Via, Francesco La; Zieliński, Marcin; Roccaforte, Fabrizio

doi:10.1002/aelm.201901171

Cited by 26 publications

(27 citation statements)

References 29 publications

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“…This suggests that APBs are mainly responsible for the enhanced reverse leakage current measured in macroscopic Pt/3C-SiC Schottky diodes. In particular, the separation between these extended defects deduced from this microscopic analysis is in the order of tens of micrometers, in very close agreement with the value of L (≈20 μm) deduced from the statistical characterization of Schottky diodes with different areas for thin 3C-SiC layers [ 63 ].…”

Section: Resultssupporting

confidence: 86%

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New Approaches and Understandings in the Growth of Cubic Silicon Carbide

et al. 2021

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In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

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Section: Resultssupporting

confidence: 86%

“…An APB is indicated by a red arrow and SFs by blue arrows. Representative line-scans across a grain boundary extracted from the topography (( b ), right panel), current maps under reverse-bias polarization (( c ), right panel), and forward-bias polarization (( d ), right panel) of the tip are shown (see Reference [ 63 ]).…”

Section: Figurementioning

confidence: 99%

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

et al. 2021

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“…Stacking faults (SFs), partial dislocations (PDs) and anti-phase boundaries (APB) or inverted domain boundaries (IDB) are the most important defects [15]. In particular, IDBs are the main defects responsible for the electrical failure of 3C-SiC/Si-based devices [16,17]. Instead, SFs can be considered highly conducting 2D defects, in the energy range where also the bulk material is conductive.…”

Section: Introductionmentioning

confidence: 99%

“…Instead, SFs can be considered highly conducting 2D defects, in the energy range where also the bulk material is conductive. Indeed, under forward polarization, SFs were demonstrated to operate as preferred current pathways, causing a decrease in turn-on voltage [ 17 ]. In 1987, Shibahara et al [ 18 ] observed the beneficial effect of the growth of 3C-SiC on an off-axis Si substrate with an off-axis angle from 2° to 5°.…”

Section: Introductionmentioning

confidence: 99%

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

et al. 2021

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This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal hot-wall chemical vapor deposition (CVD) reactor. The Si substrate was melted inside the CVD chamber, followed by the growth process. Micro-Raman, photoluminescence (PL) and stacking fault evaluation through molten KOH etching were performed on different doped samples. Then, the role of the doping and of the cut angle on the quality, density and length distribution of the stacking faults was studied, in order to estimate the influence of N and Al incorporation on the morphological and optical properties of the material. In particular, for both types of doping, it was observed that as the dopant concentration increased, the average length of the stacking faults (SFs) increased and their density decreased.

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“…The carriers tend to flow preferentially through these defects, leading to high leakages and low breakdown voltages. In [20] anti-phase boundaries (APBs) were identified to be the main responsible for the enhanced leakage current under reverse bias polarization and both APBs and SFs were shown to work as preferential current paths responsible for the reduced turn-on voltage under forward bias. In addition, the deposition of a metal on any semiconductor leads to the formation of supplementary electronic states at the Schottky interface [21].…”

Section: Introductionmentioning

confidence: 99%

Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos

Jennings

et al. 2021

IEEE Trans. on Ind. Applicat.

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The ability of cubic phase (3C-) Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective Wide Bandgap devices and homogeneous integration with Si devices. In this paper, the authors evaluated 3C-SiC-on-Si Schottky Barrier Contacts by fabricating and testing non-freestanding lateral Schottky Barrier Diodes (LSBD). To gain a deep physical insight of the complex carrier transport phenomena that take place in this material, advanced Technology Computer Aided Design (TCAD) models were developed which allowed accurately matching of measurements with simulations. The models incorporate the device geometry, an accurate representation of the bulk material properties, and complex trapping/de-trapping and tunnelling phenomena which appear to affect the device performance. The observed non-uniformities of the Schottky Barrier Height (SBH) were successfully modelled through the incorporation of interfacial traps. The combination of TCAD with fabrication and measurements enabled the identification of trap profiles and pin their influence on the electrical performance of 3C-SiC-on-Si LSBD. The effect of temperature was studied by engaging the identified trap profiles and calculating the occupation distribution of electrons in 3C-SiC at elevated temperature. The investigation constitutes an imperative knowledge step towards the development of devices that take advantage of 3C-SiC material properties.

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Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

Cited by 26 publications

References 29 publications

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes

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