Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

“…Undoped channel MOSFET's with double gate [22], surrounding gate [23], and Schottky source and drain [24] have been proposed primarily to suppress short channel effects in devices scaled to decanano dimensions. Simulations predict that such devices will remain operational to channel lengths below 10 nm [24], [25] and hence may provide a solution to the problem of dopant fluctuations once and for all.…”

Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

“…Compared with conventional planar MOSFETs, SGTs have several superior characteristics such as high packing density, high current drive capability, and immunity to the short channel effect [1][2][3][4][5][6]. In a cylindrical/surrounding gate MOSFET (CGT/SGT), a rectangular-shaped silicon core in the original SGT has been replaced with a cylindrical silicon core (pillar).…”

(Invited) Recent Progress in Vertical Si/III-V Tunnel FETs: From Fundamentals to Current-Boosting Technology

“…In addition, the area occupied by the vertical FETs is smaller than that occupied by planar FETs (31). Takato et al were the first to describe the idea of and demonstrate of surrounding-gate transistors (SGTs) (32).…”