Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

Abstract

We propose underwater laser annealing (WLA) for the inactivation of electrical defects in polycrystalline silicon thin-film transistors (poly-Si TFTs) at super low-temperature. This technique can reduce the temperature of inactivation process drastically, and it requires only UV laser and deionized water. We performed WLA after the fabrication of top-gate type poly-Si TFTs. After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to 72 cm V sec. The TFT surface was exposed to water vapor which was generated by laser irradiation, resulting that electrical defects were inactivated by active species in water vapor.Index Terms-Thin-film transistor (TFT), polycrystalline silicon (poly-Si), inactivation.

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

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Dopant behavior in heavily doped polycrystalline Ge1−xSnxlayers prepared with pulsed laser annealing in water

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