Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments

Wong, Matthew S.; Kearns, Jared; Lee, Changmin; Smith, Jordan M.; Lynsky, Cheyenne; Lheureux, Guillaume; Choi, Hyun-Woong; Kim, Jinwan; Kim, Chaehon; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

doi:10.1364/oe.384127

Cited by 125 publications

(95 citation statements)

References 30 publications

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“…This method can easily integrate RGB colors into matrices on the same substrate [7], yet the colorconversion efficiency of hybrid devices must be improved [8]. Another approach chooses to fabricate red and green µLEDs using different materials, AlInGaP for red µLEDs [9] and InGaN for green µLEDs [10]. This material difference causes a mismatched angular distribution between the red and green µLEDs [11], leading to a noticeable color shift at different observed angles.…”

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confidence: 99%

Investigation of InGaN-based red/green micro-light-emitting diodes

2021

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We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98×98 to 17×17 µm 2 . The average forward voltage at 10 A/cm 2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blue-shift of the peak wavelength (~35 nm) and broader full-width at half maximum (≥50 nm) at 2 to 50 A/cm 2 compared to green µLEDs. We demonstrated that 47×47 µm 2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.

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confidence: 99%

Investigation of InGaN-based red/green micro-light-emitting diodes

2021

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“…It was also shown that the surface recombination through Shockley‐Read‐Hall (SRH) recombination via defect levels is dominant in the smaller red LEDs. So the decrease in EQE is much more significant for red micro‐LEDs smaller than 10 μm, 16 although some improvement can be expected by surface treatment and sidewall passivation 25 …”

Section: Resultsmentioning

confidence: 99%

High‐resolution and high‐brightness full‐colour “Silicon Display” for augmented and mixed reality

Kawanishi¹,

Onuma²,

Maegawa³

et al. 2020

J Soc Info Display

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High‐brightness micro‐LED display bonded onto silicon backplane has been successfully demonstrated. The 0.38‐inch full‐colour active matrix LED microdisplay system consists of 352 × 198 pixels. Each pixel is 24 μm square composed of red, green, and blue (RGB) subpixels corresponding to a pixel resolution of 1053 ppi. Quantum‐dot materials are formed on III‐nitride blue micro‐LED array to convert blue light into red and green for full‐colour operation. We have confirmed that this microdisplay, which we call “Silicon Display” has wide colour gamut exceeding 120% of sRGB. We describe the advantage of this colour‐converting approach for the full‐colour micro‐LEDs. Progress toward higher resolution is also described. Brightness of more than 30 000 cd/m2 has been confirmed at a driving current density of 4 A/cm2 for 3000 ppi blue monochrome micro‐LED prepared for full‐colour Silicon Display. We believe our “Silicon Display” is ideally suited for near‐to‐eye displays for augmented and mixed reality.

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“…[ 10,13–29 ] For instance, Figure a–c exhibits the EQEs of different size red, green, and blue LEDs as a function of current density. [ 17,19,22 ] The maximum EQE decreases with decreasing LED size and the maximum EQE is obtained at higher current densities as chip size decreases. This behavior has been ascribed to leakage current and/or Shockley–Read–Hall (SRH) nonradiative recombination caused by sidewall defects in smaller chip geometries.…”

Section: Size Dependence Of Electrical and Optical Performancementioning

confidence: 99%

“…[ 13,17,25 ] The ideality factors were assessed using the current–voltage curves. Measurements of red AlGaInP‐based, and green and blue InGaN‐based LEDs showed that smaller devices had higher ideality factors, [ 17,19,22 ] indicating they suffered from carrier loss due to SRH nonradiative recombination at sidewall defects. [ 18,19,25 ] Further, the green and blue LEDs typically exhibit the maximum EQE at lower current than the red LEDs.…”

Section: Size Dependence Of Electrical and Optical Performancementioning

confidence: 99%

Micro‐Light Emitting Diode: From Chips to Applications

Parbrook

Corbett

Han

et al. 2021

Laser & Photonics Reviews

157

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Typical light‐emitting diodes (LEDs) have a form factor >(300 × 300) µm2. Such LEDs are commercially mature in illumination and ultralarge displays. However, recent LED research includes shrinking individual LED sizes from side lengths >300 µm to values <100 µm, leading to devices called micro‐LEDs. Their advent creates a number of exciting new application spaces. Here, a review of the principles and applications of micro‐LED technology is presented. In particular, the implications of reduced LED size in necessitating mitigation strategies for nonradiative device edge damage as well as the potential for higher drive current densities are discussed. The opportunities to integrate micro‐LEDs with electronics, and into large‐scale arrays, allow pixel addressable scalable integrated displays, while the small micro‐LED size is ideal for high‐speed modulation for visible light communication, and for integration into biological systems as part of optogenetic therapies.

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Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments

Cited by 125 publications

References 30 publications

Investigation of InGaN-based red/green micro-light-emitting diodes

Investigation of InGaN-based red/green micro-light-emitting diodes

High‐resolution and high‐brightness full‐colour “Silicon Display” for augmented and mixed reality

Micro‐Light Emitting Diode: From Chips to Applications

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