Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)

Yoon, Joo-Won; Yoon, Sung‐Min; Ishiwara, Hiroshi

doi:10.1143/jjap.49.030201

Cited by 9 publications

(4 citation statements)

References 11 publications

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“…Earlier studies have characterized the morphology, dielectric and ferroelectric properties of P(VDF-TrFE)/PMMA blends and shown an improvement in performance. [13][14][15] Apart from PMMA, there are almost no reports of P(VDF-TrFE) blends with other insulating polymers for ferroelectric memory applications.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Khan

Bhansali

Almadhoun

et al. 2013

Adv Funct Materials

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High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fl uoride-trifl uoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend fi lms spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend fi lms are spin cast with extremely low roughness (R rms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 10 6 cycles at 1 KHz) and high dielectric breakdown fi elds (≈360 MV/m).

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Section: Introductionmentioning

confidence: 99%

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Khan

Bhansali

Almadhoun

et al. 2013

Adv Funct Materials

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“…Although the electrical cycling endurances of the F-MTFT were not evaluated owing to the inconvenience of measurement system, the properties can be inferred from the data obtained for the P(VDF-TrFE) capacitors, because the cycling endurance is mainly related to the fatigue behaviors of the P(VDF-TrFE). The stable polarization switching was verified during 1 Â 10 5 cycles, 24 which is comparable to the programming endurance of conventional flash memory.…”

Section: Resultsmentioning

confidence: 59%

Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel

Yoon

Yang

Park

2011

J. Electrochem. Soc.

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The flexible nonvolatile memory thin-film transistor (F-MTFT) is demonstrated. The gate stack is composed of ferroelectric poly(vinylidene fluoride-trifluoroethylene) gate insulator and ZnO semiconducting channel. All the processes are performed below 150 C on a poly(ethylene naphthalate) substrate. The ferroelectric field-effect-driven memory window and the on/off ratio of the fabricated F-MTFT were 7.8 V and 10 8 , respectively. These behaviors did not show so marked degradations at bending situations with a curvature radius of 0.97 cm and after repetitive bendings of 20,000 cycles. The programmed on/off ratio was initially 6.6 Â 10 5 and retained to be approximately 130 after a lapse of 15,000 s.Flexible electronic devices and systems realized on bendable and rollable substrates define important application fields of new paradigm for next-generation "consumer electronics." 1-6 In developing the highly-functional flexible electronic systems, an embeddable nonvolatile memory device is a strongly required as a core element for saving the power consumption 7 as well as for storing the information.So far, various approaches using different operating origins and material combinations such as oxide-based 8 and polymer-based 9 resistive-type memory devices, have been tried to realize the nonvolatile memory functions on the flexible substrates. Among them, the ferroelectric-field-effect-based thin-film transistor (TFT) is one of the most promising candidates for the flexible memory devices. 10,11 The ferroelectric TFT can be operated in a very reproducible way with a definitely designable operation principle and simply be fabricated. The employment of polymeric ferroelectric thin film can offer an attractive solution to reduce the process temperature. A poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is the most typical ferroelectric copolymer material. It shows superior properties of a relatively large remnant polarization, a short switching time, and a good thermal stability, compared with other organic ferroelectric materials. 12,13 The P(VDF-TrFE) thin film can simply be formed by a solution-based spin-coating method and be crystallized at a lower temperature around 140 C, which is one of the benefits in realizing the memory device on the plastic substrate. Although most works on the fabrication and characterization for the nonvolatile memory transistors using the P(VDF-TrFE) have mainly been investigated for realizing all-organic memory transistors with organic semiconducting channel layers, 14,15 the weaknesses of a low field-effect mobility, an unsatisfactory ambient stability, and a difficult device integration with organic-based transistors seriously limit the scopes of application fields. A powerful alternative for enhancing and stabilizing the device performance is to utilize the oxide semiconductors such as ZnO or In-Ga-Zn oxide (IGZO). The oxide semiconductorbased TFTs present such beneficial features as high field-effect mobility, excellent uniformity, and robust device stability. 16,17 The comb...

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“…The obtained eld-effect mobility of the 0 and 1 states were 263 and 573 cm 2 V À1 s À1 , respectively, which are better than those obtained previously for a ferroelectric memory TFT based on low-temperature poly-Si and single-crystalline-Si. [31][32][33][34][35] A high eld-effect mobility boosts the switching speed of the system. The device also had excellent electrical properties, such as high mobility, a high on/off drain current ratio, 5 Â 10 6 , and a steep sub-threshold slope of 170 mV decade À1 .…”

Section: Resultsmentioning

confidence: 99%

“…Although platinum electrodes are widely used in ferroelectric capacitors, they cannot be used in high-density devices due to poor adhesion and the accumulation of oxygen vacancies during the large number of bipolar cycles. 34 Aer a patterning of the MoW/PZT/ SiO 2 /SiON structure, B 2 H 6 was doped at 17 keV by an ion shower system to form a source and drain region (Fig. 1g).…”

Section: Methodsmentioning

confidence: 99%

Integration of large single-grain Pb(Zr,Ti)O₃ into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display

et al. 2014

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Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)

Cited by 9 publications

References 11 publications

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel

Integration of large single-grain Pb(Zr,Ti)O₃ into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display

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Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)

Cited by 9 publications

References 11 publications

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel

Integration of large single-grain Pb(Zr,Ti)O3 into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display

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Integration of large single-grain Pb(Zr,Ti)O₃ into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display