Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Hitomi, Keiichiro; Halle, Scott; Miller, Marshal; Graur, Ioana; Saulnier, Nicole; Dunn, Derren; Okai, Nobuhiro; Hotta, Susumu; Yamaguchi, A.; Komuro, Hitoshi; Ishimoto, Toru; Koshihara, Shunsuke; Hojo, Yutaka

doi:10.1117/1.jmm.15.3.034002

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…The proximity effect correction method has been introduced to adjust the unintended optical interaction between field structures, and enhance pattern quality by utilizing dose correction combined with assist features for the original target pattern image, for good pattern fidelity and fabrication efficiency [29][30][31][32][33][34][35][36]. In conventional optical projection lithography used in the semiconductor industry, optical proximity correction (OPC) is extensively used to design and adjust the mask patterns affected by the imaging distortion induced by optical interference between nearby features.…”

Section: Introductionmentioning

confidence: 99%

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation

Han

Shim

et al. 2017

Nanotechnology

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Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field distribution for pattern design. We relaxed the shape complexity of the field distribution with pixel-based optical proximity correction (OPC) for simplifying the pattern image distortion. To enhance the pattern fidelity for a variety of arbitrary patterns, field-sectioning structures are formulated via convolutions with a time-modulation function and a transient PSF along the near-field dominant direction. The sharpness of corners and edges, and line shortening can be improved by modifying the original target pattern shape using the proposed approach by considering both the pattern geometry and directionality of the field decay for OPC in near-field lithography.

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Section: Introductionmentioning

confidence: 99%

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation

Han

Shim

et al. 2017

Nanotechnology

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Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

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Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

Okai

Lavigne

Hitomi

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Cited by 5 publications

References 18 publications

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation

Metrology for the next generation of semiconductor devices

Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

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