Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Zhang, Zhenzhong; Wang, Fang; Hu, Kai; She, Yu; Song, Sannian; Zhang, Song; Zhang, Kailiang

doi:10.3390/ma14123330

Cited by 21 publications

(19 citation statements)

References 32 publications

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“…The obtained discrete coefficient ( SD /mean) for set and reset state are 0.37 and 0.97 respectively. [ 42 ]…”

Section: Resultsmentioning

confidence: 99%

“…The obtained discrete coefficient (SD/mean) for set and reset state are 0.37 and 0.97 respectively. [42] Table 1 summarizes the different materials, exhibiting write once read many (WORM) characteristics with analog switching together with characteristics of the present device. It seems that most of the devices exhibit good retention time and high endurance cycles.…”

Section: Resultsmentioning

confidence: 99%

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Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi₁₂FeO₂₀ Ideal Sillenite

Prakash

Sahoo

Dixit

2023

Physica Status Solidi (a)

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The diverse use of electronic gazettes, equipped with the internet of things (IoT) and artificial intelligence, demand extensive data storage, and simultaneous processing. It poses serious challenges for the current computing devices based on von Neumann architecture, where processing and storage units are separate from each other and thus, need large power consumption. [1][2][3][4] Neuromorphic computing is considered an alternative to the von Neumann architecture as it has the potential for mimicking the human brain. Thus, resistive random-access memory (RRAM) can behave like an artificial neural network due to its nonvolatile nature, extensive data storage capability, ease of fabrication, and ability to act like synapses. RRAM is a two-terminal device with a metalinsulator-metal configuration. Further, it is divided into two sub-categories: 1) digital switching (DS)-based RRAM (i.e., abrupt change in resistance during high resistance to low resistance state transition) and 2) analog switching (AS)-based RRAM (i.e., gradual change in resistance while changing state from low to high or high to low resistance states). [5][6][7][8] DS-RRAM devices are explored more as compared to AS-RRAMs in general. Recently, AS-RRAM devices are also getting attention due to the ease of their implantation in the artificial neural network. The migration of oxygen ions is introduced or promoted to control the abrupt change in resistance using active bilayer material together with compliance current. The minimum and maximum resistances in analog RRAM devices are referred to as low and high resistance states. In contrast, intermediate resistance is referred to as the medium resistance state. Further, resistive switching-based devices are of two categories: 1) the first one is a write once read many (WORM), and 2) the second one is a rewritable one. [9] In WORM-based devices, once data is stored, it cannot be erased, i.e., these can be used for storing permanent data. [10] However, the stability of WORM devices is similar to that of rewritable devices, as both exhibit considerable Joule heating effect. [11] WORM is commonly observed on polymer, metal oxide, and organic semiconductors. The coexistence of resistive switching and negative differential resistance (NDR) in the oxide-based device has been demonstrated in NbO 2 , ZnO, TiO x , WO x , BaTiO 3, BiFeO 3 , etc.,. [12][13][14][15] However, oxide/ sulfide, [16] heterostructures-based devices are also explored for resistive switching and neuromorphic computing. For example, Shen [17] et al. showed TiN x O 2Àx /MoS 2 as an excellent resistive switching material together with its synaptic behavior in presence of light. Similarly, Qi Liu [18] et al., observed excellent resistive behavior with a large LRS/HRS ratio, high durability, and stability in oxide-based HfO 2 /WO 3 heterostructure and proposed that ion transport in the device is due to the Schottky barrier and conductive filament formation. In general, the current increases with increasing applied voltage, which sometimes exhibi...

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“…The obtained discrete coefficient ( SD /mean) for set and reset state are 0.37 and 0.97 respectively. [ 42 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi₁₂FeO₂₀ Ideal Sillenite

Prakash

Sahoo

Dixit

2023

Physica Status Solidi (a)

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“…25 Another previous study reported that oxygen vacancies (V o ) can be added to HfO x through S doping resulting in device improvement such as more uniformity in resistance change and stable endurance. 26 In addition, an increase of oxygen vacancy (V o ) defect concentration in the active layer has been shown to lead to enhanced switching characteristics such as stable multi-level resistive switching, a higher on/off ratio, and gradual reset behvaior. 27 Al-Doped HfO x based devices along with post-deposition annealing have been shown to have promising multi-level switching characteristics.…”

Section: Introductionmentioning

confidence: 99%

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

et al. 2022

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“…One approach to optimize to improve analog RS is doping. Ti [3], Al [4,5], Mg [6], Ni [7], Au [8], S [9] have been introduced as dopants into HfO 2 layers to tailor the formation of CFs, resulting in improved RS performance and gradual switching. On the other hand, the metal/oxide interface is significant for the formation and dynamics of V O and thus many efforts have been carried out to engineer the interfaces to optimize the multilevel RS and the reliability.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin HfO₂/Al₂O₃ bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing

Wang

Luo

et al. 2022

Neuromorph. Comput. Eng.

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Neuromorphic computing requires highly reliable and low power consumption electronic synapses. Complementarymetal-oxide-semiconductor (CMOS) compatible HfO2 based memristors are a strong candidate despite of challenges like non-optimized material engineering and device structures. We report here CMOS integrated 1-transistor-1-resistor (1T1R) electronic synapses with ultrathin HfO2/Al2O3 bilayer stacks (< 5.5nm) with high-performances. The layer thicknesseswere optimized using statistically extensive electrical studies and the optimized HfO2(3 nm)/ Al2O3(1.5 nm) sample shows the high reliability of 600 DC cycles, the low Set voltage of ~0.15 V and the low operation current of ~6 µA. Electron transport mechanisms under cycling operation of single-layer HfO2 and bilayer HfO2/Al2O3 samples were compared, and it turned out that the inserted thin Al2O3 layer results in stable ionic conduction. Compared to the single layer HfO2 stack with almost the same thickness, the superiorities of HfO2/Al2O3 1T1R RRAM devices in electronic synapse were thoroughly clarified, such as better DC analog switching and continuous conductance distribution in a larger regulated range (0 µS ~700 µS). Using the proposed bilayer HfO2/Al2O3 devices, a recognition accuracy of 95.6% of MNIST dataset was achieved. These results highlight the promising role of the ultrathin HfO2/Al2O3 bilayer RRAM devices in the application of high-performance neuromorphic computing.

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Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Cited by 21 publications

References 32 publications

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi₁₂FeO₂₀ Ideal Sillenite

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi₁₂FeO₂₀ Ideal Sillenite

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Ultrathin HfO₂/Al₂O₃ bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing

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Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Cited by 21 publications

References 32 publications

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi12FeO20 Ideal Sillenite

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi12FeO20 Ideal Sillenite

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM

Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing

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Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi₁₂FeO₂₀ Ideal Sillenite

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi₁₂FeO₂₀ Ideal Sillenite

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Ultrathin HfO₂/Al₂O₃ bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing