We
propose spectral domain attenuated reflectometry (SDAR) for
fast characterization of nanomaterial growth. The method is demonstrated
here for zinc oxide (ZnO) nanowires (NWs) which are grown vertically
in random forest fashion showing that it is not limited to well-ordered
NWs. We show how SDAR can provide, on the basis of a single measured
spectrum, simultaneous information on nanowire length, nanowire density
(through nanowire/air filling ratio), and crystalline quality (through
band gap). The robustness of the proposed method is assessed first
through comparison with information obtained from SEM and XRD taken
as reference. In SDAR, the process for fast extraction of NW thickness
and filling ratio values makes use of the interference pattern
contrast and the spectral periodicity in the reflection response which
involve a best fit of the measured spectra with simple theoretical
modeling based on the effective medium approach, achieved with a mean
square error down to 0.1%. The results also suggest the existence
of either 2 or 3 layers of different effective refractive index, hence
providing insight on possible growth mechanisms.