Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment

Abstract

The 1=f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1=f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

“…For example, early work by Brophy [26] showed that the deformation of germanium led to increased noise. More recently, work on nitrided MOSFETs [27], [28] has shown that high surface noise is measured due to stress created by the nitrided gate oxides and that stress relief decreases this noise. These results would be consistent with the results in this work.…”

“…There is some evidence in the literature to suggest that stress relief can occur as a result of the implant of a gas. For example, an argon implant into the back of a silicon wafer has been found to reduce the stress at the front surface of the wafer and reduce noise [27], [28] . Finally, it is necessary to consider why an anneal at 975 C gives increased noise, whereas anneals of 950 and 900 C do not.…”

<title>Modeling of the carrier mobility at the silicon oxynitride-silicon interface</title>

“…Classical electric methods of investigations of mobility related phenomena are restricted because the relatively low mobility of the trapping carriers limits electroconductivity' 13 . In order to assess the possible explanations both for these phenomena and for the nature of the defects, which have been proposed, a study of the electronic structure of a MOS system, using silicon oxynitrides as gate oxide, based on a first-principle molecular dynamic method, was carried out.…”