Improvements of Defects by Patterning Using Thermal Nanoimprint Lithography

Park, Hyung Seok; Shin, Ho Hyun; Sung, Man Young; Choi, Woo Beom; Choi, Seung Woo; Park, Sang Yong

doi:10.1143/jjap.46.1808

Cited by 5 publications

(5 citation statements)

References 26 publications

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“…the radius of gyration of a polymer) [123,214,314]. An incomplete understanding of defect formation is one challenge facing the commercialization of NIL [336]. The pattern fidelity of NIL is affected by many factors, including the choice of mould material, polymer material, the release layer, pattern complexity, and processing conditions [258,[336][337][338][339].…”

Section: Limitations Of Nanoimprint and Replica Moulding Lithographiesmentioning

confidence: 99%

“…An incomplete understanding of defect formation is one challenge facing the commercialization of NIL [336]. The pattern fidelity of NIL is affected by many factors, including the choice of mould material, polymer material, the release layer, pattern complexity, and processing conditions [258,[336][337][338][339]. The choice of materials will ultimately be decided by the design rules of a particular application and allowable imprinting conditions (temperature, pressure, and etch selectivity).…”

Section: Limitations Of Nanoimprint and Replica Moulding Lithographiesmentioning

confidence: 99%

See 1 more Smart Citation

Unconventional methods for forming nanopatterns

Stewart

Motala

Yao

et al. 2006

Proceedings of the Institution of Mechanical Engineers, Part N:

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Nanostructured materials have become an increasingly important theme in research, in no small part due to the potential impacts this science holds for applications in technology, including such notable areas as sensors, medicine, and high-performance integrated circuits. Conventional methods, such as the top-down approaches of projection lithography and scanning beam lithography, have been the primary means for patterning materials at the nanoscale. This article provides an overview of unconventional methods -both top-down and bottom-up approaches -for generating nanoscale patterns in a variety of materials, including methods that can be applied to fragile molecular systems that are difficult to pattern using conventional lithographic techniques. The promise, recent progress, advantages, limitations, and challenges to future development associated with each of these unconventional lithographic techniques will be discussed with consideration given to their potential for use in large-scale manufacturing.

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Section: Limitations Of Nanoimprint and Replica Moulding Lithographiesmentioning

confidence: 99%

Section: Limitations Of Nanoimprint and Replica Moulding Lithographiesmentioning

confidence: 99%

Unconventional methods for forming nanopatterns

Stewart

Motala

Yao

et al. 2006

Proceedings of the Institution of Mechanical Engineers, Part N:

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“…16) Park et al improved defective transfer in thermal nanoimprinting by changing the imprinting temperature and pressure during pressing. 17) In other studies, longitudinal waves of ultrasonic vibrations were applied during the molding process; 18) this assisted the liquefaction of the softened thermoplastic. The formation of a self-assembled monolayer of fluororesin on the surface of a Ni mold has also been achieved.…”

Section: Introductionmentioning

confidence: 99%

Uniform Thermal Nanoimprinting at Low Pressure by Improved Heat Transfer Using Hydrofluoroethers

Mekaru¹,

Hiroshima²

2013

Jpn. J. Appl. Phys.

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We propose a low-pressure process of thermal nanoimprinting by improved heat transfer. In poly(ethylene terephthalate) (PET; T g=75 °C), poly(methyl methacrylate) (PMMA; T g=105 °C), and polycarbonate (PC; T g=150 °C), in which fine pattern transfer can be performed at 12.9 MPa, if the imprinting pressure is reduced to one-third, poor transfer occurs at the edges of the patterned area, and the uniformity of the entire patterned area degrades. However, it turned out that moldability can be improved significantly by introducing hydrofluoroether (HFE) between the mold and the surface of thermoplastic sheets. A dispensing method using a pipette was chosen to introduce HFE, and three types of HFE liquid, namely, Novec 7100 (bp=61 °C), Novec 7200 (bp=76 °C), and Novec 7300 (bp=98 °C), were tested. It was confirmed that the uniformity was greatly improved by combinations of PET and Novec 7100, PMMA and Novec 7200, and PC and Novec 7300. The heat of the mold spread efficiently onto the surface of thermoplastics via the HFE liquid, and it seems to result in the same effect as a preliminary heating process before the mold comes into contact with the thermoplastic sheet.

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“…The highest resolution patterning was demonstrated by Willson at the University of Texas, 1) and by Sakai,2) and Liang et al 3) Multiple spinon planarizing materials for lithography have been also reported. [4][5][6] For advanced nanoimprint lithography, [7][8][9][10][11][12][13][14][15][16][17] however, further technical progress is required in resist pattern peeling, generated defects, process throughput, and the manufacture of high-resolution templates. On these issues, we have developed a new hard mask material with methacrylate side groups in siloxane polymer to obtain a wider imprinting margin, higher regional planarization on…”

Section: Introductionmentioning

confidence: 99%

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

Takei

Ogawa

Deschner

et al. 2010

Jpn. J. Appl. Phys.

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Nanoimprint lithography is a newly developed patterning method that employs a hard template for the patterning of structures at micro- and nanometer scales. This technique has many advantages such as cost reduction, high resolution, low line edge roughness (LER), and easy operation. However, resist peeling, defects, low degree of planarization, and low throughput issues present challenges that must be resolved in order to mass produce advanced nanometer-scale devices. In this study, the new approach of using a silicon-containing spin-on hard mask underlayer material with high adhesion by reacting methacrylate groups of the underlayer to the acrylate groups of resist material during ultraviolet irradiation was demonstrated to obtain the excellent patterning dimensional accuracy and increase the process latitudes. The performance of this process is evaluated by using step and flash imprint lithography. The obtained high adhesion between the underlayer and resist material was found to lead a silicon-containing underlayer material to excellent patterning dimensional accuracy and 80 nm straight profiles. We expect that the silicon-containing a spin-on hard mask material under organic resist will be one of the most promising materials in the next generation of nanoimprint lithography.

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Improvements of Defects by Patterning Using Thermal Nanoimprint Lithography

Cited by 5 publications

References 26 publications

Unconventional methods for forming nanopatterns

Unconventional methods for forming nanopatterns

Uniform Thermal Nanoimprinting at Low Pressure by Improved Heat Transfer Using Hydrofluoroethers

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

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