Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition

Abstract

To improve the water-resistance of the MgO-based metal-insulator-metal (MIM) capacitors, BeO/MgO/BeO/MgO/BeO (BMBMB) stacked layers with a total thickness of ~ 10 nm (2/2/2/2/2 nm) were deposited at 335°C by atomic...

Improved electrical performance of ultra-thin BexMg1−xO films using super-cycle atomic layer deposition

“…The cycle ratios chosen were 1 : 2, 1 : 1, and 2 : 1, resulting in GPC values of 0.43 nm s-cy À1 , 0.22 nm s-cy À1 , and 0.32 nm s-cy À1 , respectively. These values are consistent with the calculated values based on the formula GPC a : b = a  GPC MgO + b  GPC BeO , using the known GPC values of MgO (0.15 nm cy À1 ) and BeO (0.09 nm cy À1 ) in previous studies 40,41 (The calculated values were GPC 1 : 2 = 0.39 nm s-cy À1 , GPC 1 : 1 = 0.24 nm s-cy À1 , and GPC 2 : 1 = 0.33 nm s-cy À1 ). Fig.…”

“…The minimum EOT within the standard leakage current specification was 1.30 nm (with J B 1.8 Â 10 À8 A cm À2 ). Considering that the minimum EOT reported for MgO and BeO in earlier studies hovered around 3 nm, 40,41 it is evident that utilizing a BeO-MgO solid solution film deposited through super-cycle ALD brings beneficial enhancements in electrical performances.…”

“…Previous research that adopted laminated BeO/MgO/BeO films for water stability enhancement discussed the path for water diffusion. 41 In that case, it was assumed that degradation occurred partially near the interface between the dielectric layer and the top electrode. In the present study, the degradation of J – V was more prominent in thicker samples.…”