In-depth investigation of spin-on doped solar cells with thermally grown oxide passivation

Ahmad, Samir; Cheow, S. L.; Ludin, Norasikin Ahmad; Sopian, Kamaruzzaman; Zaidi, Saleem H.

doi:10.1016/j.rinp.2017.06.044

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…For POCl 3 technique, phosphorus source is supplied during the whole process while with the DB/EDB techniques, the source is limited which came from the deposited H 3 PO 4 film. These methods agreed with the results presented by other researchers (Ahmad et al 2017;Yadav et al 2015).…”

Section: Methodssupporting

confidence: 93%

“…Therefore, in the interest of environmentfriendliness as well as inexpensive manufacturing, use of phosphoric acid (H 3 PO 4 ) as the dopant source represents an almost perfect alternative. Several approaches of phosphorus diffusion have been reported including spin-on (Ahmad et al 2017;Balaji et al 2015;Moon et al 2009), ion implantation (Lee et al 2013;Yang et al 2015), and spray-on phosphoric acid (Basu et al 2016). In most of the reported work, use of commercially-manufactured dopants increases costs and places constraints on its shelf-life.…”

Section: Methodsmentioning

confidence: 99%

“…Moon et al (2009) reported that H 3 PO 4 diluted with deionized (DI) water exhibit non-uniformity over the silicon wafer due to poor surface wettability. This issue was resolved using radio corporation of America (RCA), RCA-2 standard solution to form hydrated surfaces (Ahmad et al 2017). The DB method investigated in this paper is based on the work reported by Deng et al (2015) and Kontos et al (2008) on organic materials for solar cell applications.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Ahir¹,

Sepeai²,

Zaidi³

2018

JKUKM

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Crystalline silicon (c-Si) wafer-based solar cells have been dominating the current photovoltaic industries. However, prevalent manufacturing practices are based on environmentally-harmful chemicals and expensive methodologies. This paper reports on the development of inexpensive, environmentally-benign phosphoric acid-based emitter formation methods as an alternative to conventional highly toxic and poisonous POCl 3 gas source-based chemistry. Two emitter formation approaches at temperatures in 850-925 o C range have been investigated. The first approach is referred to as the doctor blade (DB) technique, where the flat Si wafer surface is uniformly coated by phosphoric acid (H 3 PO 4 ) via a moving blade. A small gap between the blade and wafer is maintained in order to form a thin uniform film on the wafer. The second method is referred to as the extension of the blade method (EDB), where an un-doped wafer is placed proximately to the deposited H 3 PO 4 wafer. During the high temperature drive-in process, phosphorous emitter was formed on the un-doped wafer surface through evaporation and deposition of phosphorus atoms from H 3 PO 4 coated wafer. All diffusion processes were carried out on 180 µm thick, planar boron-doped Si wafers in a conventional quartz tube furnace. The variation of sheet resistances over a broad range from ~20-180 Ω/sq were consistent with temperature dependence. Highest diffusion uniformity was observed for 10% H 3 PO 4 solution. Diffusion process simulations based on DifCad software were in good agreement with experimental data. The work reported here illustrates that an environmentally-benign approach in emitter formation based on H 3 PO 4 is feasible for manufacturing solar cells. ABSTRAKSel suria berasaskan wafer silikon hablur (c-Si) telah mendominasi industri fotovoltan masa kini. Walau bagaimanapun, amalan pengilangan lazim adalah berdasarkan penggunaan bahan kimia yang berbahaya dan kaedah yang mahal. Kertas kajian ini melaporkan tentang pembangunan kaedah pembentukan pemancar yang murah, mesra alam sekitar berasaskan asid fosforik sebagai alternatif kepada bahan bertoksik dan sumber gas kimia beracun konvensional berasaskan POCl 3 . Dua pendekatan pembentukan pemancar pada julat suhu o C dikaji. Pendekatan pertama merujuk kepada teknik bilah doktor (DB), di mana permukaan rata wafer Si disalut secara seragam oleh asid fosforik (H 3 PO 4 ) melalui bilah bergerak. Jurang kecil diantara bilah dan wafer dikekalkan bagi membentuk satu filem nipis seragam di atas wafer. Kaedah kedua merujuk kepada teknik bilah doktor lanjutan (EDB) dimana wafer tidak terdop diletakkan berhampiran dengan wafer yang telah dimendapkan dengan filem H 3 PO 4 . Semasa proses pandu masuk bersuhu tinggi, pemancar fosforus terbentuk di atas permukaan wafer tidak terdop melalui penyejatan dan pemendapan atom fosforus dari wafer bersalut H 3 PO 4 . Semua proses peresapan dijalankan ke atas wafer silikon terdop boron berstruktur satah dengan ketebalan 180 µm di dalam relau tiub kuarza konvensional. Variasi rintan...

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Section: Methodssupporting

confidence: 93%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Ahir¹,

Sepeai²,

Zaidi³

2018

JKUKM

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“…SiO 2 solutions are typically used as they can by readily formed, resist high annealing temperature, and theoretically removed using standard semiconductor processing. Advantages of SOD are process simplicity, low toxicity, low cost, and no explicit substrate damage this has historically made the process attractive to solar cell manufacturing where wafer cost is of utmost importance [28,29]. However, these dopant containing glasses are sometimes not easily removed as the high concentration of dopant molecules inhibit the etching of the SiO 2 using standard HF chemistries.…”

Section: Spin On Dopingmentioning

confidence: 99%

(Invited) Doping Considerations for Finfet, Gate-All-Around, and Nanosheet Based Devices

2020

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The IEEE International Roadmap for Devices and Systems (IRDS) for More Moore devices summarises the Logic Device state of play very effectively; the FinFET is the key device architecture that could enable logic device scaling until 2025. Increasing fin height while reducing number of fins at unit footprint area is an effective solution to improve performance. It is forecasted that the parasitics will remain as a dominant term in the performance of critical paths. For reduced supply voltage, a transition to gate-all-around (GAA) structures such as lateral nanowires or nanosheets will be necessary to improve electrostatics. Lateral GAA structure would eventually evolve in to the vertical GAA structure to gain back the performance loss due to increasing parasitics at tighter pitches. In this paper we will consider doping techniques based on ion implant, solid-source in-diffusion, liquid-source in-diffusion, and gas-source in-diffusion for these device technologies.

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