In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)

Owen, D; David, Laurent; Pitts, O.J.; Watkins, Simon P.; Mooney, P. M.

doi:10.1088/0268-1242/24/3/035011

Cited by 10 publications

(20 citation statements)

References 17 publications

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“…Similar measurements can also be transferred to widely used InGaAs QDs for tuning the HH-LH mixing over a broad range. This could be achieved, for example, by integrating them into a MBE-grown pre-stressed membrane [26,37]. If layers of the membrane are properly engineered then they could provide an additional tensile stress to the QDs, which would bring HH and LH states closer to each other, thus enhancing the HH-LH coupling.…”

Section: Hh-lh Mixing and Hh-lh Splitting In Qdsmentioning

confidence: 99%

Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

et al. 2014

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International audienceWe study the effects of heavy hole-light hole (HH-LH) mixing on fine-structure and polarization properties of neutral excitons ( X-0) confined in single GaAs/AlGaAs quantum dots (QDs) under the application of anisotropic biaxial stress. In the large HH-LH mixing regime, these properties are substantially different from the usually observed properties in the case of small or no mixing. By varying the applied stress, the mixing in the initially strain-free QDs changes from similar to 0 to similar to 70% and an anomalous anticrossing of the X-0 bright states is observed. The latter is attributed to stress-induced rotation of the in-plane principal axis of the QD confinement potential. We show that the analysis of free-excitonic emission of bulk GaAs surrounding the QDs not only allows estimation of the stress and mixing in the QDs, but also provides the quantum-confinement-induced HH-LH splitting of the as-grown QDs

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Section: Hh-lh Mixing and Hh-lh Splitting In Qdsmentioning

confidence: 99%

Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

et al. 2014

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“…Other approaches to provide elastically-relaxed (defectfree) 'virtual substrates' include epitaxial growth on freestanding semiconductor slabs [8,9] and epitaxial growth of strained layers on a sacrificial layer that is later removed to allow elastic strain relaxation to occur [10,11]. One such approach, called in-place bonding, was first applied to achieve a strained Si layer on a Si(0 0 1) substrate [11] and more recently was demonstrated for GaAs/InGaAs/GaAs structures on GaAs(0 0 1) substrates [12,13]. In the latter case elastic strain relaxation and bonding occur during removal of a sacrificial AlAs or AlGaAs layer in a wet etch solution.…”

Section: Introductionmentioning

confidence: 99%

Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

Mooney

Kavanagh

Owen³

et al. 2014

Semicond. Sci. Technol.

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Engineered or 'virtual' substrates are of interest to extend the range of epitaxially-grown semiconductor heterostructures available for device applications. To this end, elastically strain-relaxed square features up to 30 μm in size and having an in-plane lattice constant as much as 0.49% larger than the lattice constant of GaAs were fabricated from MOCVD-grown GaAs/In 0.08 Ga 0.92 As/GaAs heterostructures by the in-place bonding method, using either AlAs or Al 0.7 Ga 0.3 As as the sacrificial layer. TEM images show that the solution-bonded interface is flat with a network of sessile edge dislocations that accommodates the different in-plane lattice constants of the feature and the GaAs substrate and a small rotation of the bonded features. Micro-Raman spectroscopy, which has a spatial resolution of ∼1 μm, was shown to be useful for characterizing lattice mismatch strain 0.0023, i.e. with an order of magnitude lower sensitivity than high-resolution XRD.

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“…1b). Finally, to allow the light hole to become the ground state, a biaxial tensile strain of about 0.36% is induced on the ∼8-nmhigh quantum dots by embedding them into symmetrically prestressed membranes, which are then released from the substrate 24 (see arrows in Fig. 1a biaxial strain is achieved by placing the membranes onto a piezoelectric actuator 25,26 .…”

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confidence: 99%

A light-hole exciton in a quantum dot

et al. 2013

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A light-hole exciton is a quasiparticle formed from a single electron bound to a single light hole. This type of fundamental excitation, if confined inside a semiconductor quantum dot, could be advantageous in quantum information science and technology. However, it has been difficult to access it so far, because confinement and strain in conventional quantum dots favour a ground-state single-particle hole with a predominantly heavy-hole character. Here we demonstrate the creation of a light-hole exciton ground state by applying elastic stress to an initially unstrained quantum dot. Its signature is clearly distinct from that of the well-known heavy-hole exciton and consists of three orthogonally polarized bright optical transitions and a fine-structure splitting of hundreds of microelectronvolts between in-plane and out-of-plane components. This work paves the way for the exploration of the fundamental properties and of the potential relevance of three-dimensionally confined light-hole states in quantum technologies.

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In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)

Cited by 10 publications

References 17 publications

Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

A light-hole exciton in a quantum dot

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