An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions.
Two-dimensional
transition metal dichalcogenide semiconductors are intriguing hosts
for quantum light sources due to their unique optoelectronic properties.
Here, we report that strain gradients, either unintentionally induced
or generated by substrate patterning, result in spatially and spectrally
isolated quantum emitters in mono- and bilayer WSe2. By
correlating localized excitons with localized strain variations, we
show that the quantum emitter emission energy can be red-tuned up
to a remarkable ∼170 meV. We probe the fine-structure, magneto-optics,
and second-order coherence of a strained emitter. These results raise
the prospect of strain-engineering quantum emitter properties and
deterministically creating arrays of quantum emitters in two-dimensional
semiconductors.
We integrate resonant-cavity light-emitting diodes containing quantum dots onto substrates with giant piezoelectric response. Via strain, the energy of the photons emitted by the diode can be precisely controlled during electrical injection over a spectral range larger than 20 meV. Simultaneously, the exciton fine-structure-splitting and the biexciton binding energy can be tuned to the values required for entangled photon generation.
Atom-based measurements of length, time, gravity, inertial forces and electromagnetic fields are receiving increasing attention. Atoms possess properties that suggest clear advantages as self calibrating platforms for measurements of these quantities. In this review, we describe work on a new method for measuring radio frequency (RF) electric fields based on quantum interference using either Cs or Rb atoms contained in a dielectric vapor cell. Using a bright resonance prepared within an electromagnetically induced transparency window it is possible to achieve high sensitivities, <1 μV cm−1 Hz−1/2, and detect small RF electric fields
μV cm−1 with a modest setup. Some of the limitations of the sensitivity are addressed in the review. The method can be used to image RF electric fields and can be adapted to measure the vector electric field amplitude. Extensions of Rydberg atom-based electrometry for frequencies up to the terahertz regime are described.
A light-hole exciton is a quasiparticle formed from a single electron bound to a single light hole. This type of fundamental excitation, if confined inside a semiconductor quantum dot, could be advantageous in quantum information science and technology. However, it has been difficult to access it so far, because confinement and strain in conventional quantum dots favour a ground-state single-particle hole with a predominantly heavy-hole character. Here we demonstrate the creation of a light-hole exciton ground state by applying elastic stress to an initially unstrained quantum dot. Its signature is clearly distinct from that of the well-known heavy-hole exciton and consists of three orthogonally polarized bright optical transitions and a fine-structure splitting of hundreds of microelectronvolts between in-plane and out-of-plane components. This work paves the way for the exploration of the fundamental properties and of the potential relevance of three-dimensionally confined light-hole states in quantum technologies.
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