In-situ monitoring of the p- and n-type doping in AlGaInP

Krahmer, C.; Behres, A.; Schubert, M.; Streubel, K.

doi:10.1016/j.jcrysgro.2008.09.007

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…For this purpose, in situ optical techniques such as reflectance difference spectroscopy (RDS), 1,2 reflectance anisotropy spectroscopy (RAS), 3,4 spectroscopic ellipsometry (SE), 5,6 surface photoabsorption (SPA), 7,8 laser reflectometry (LR), 9,10 and spectral reflectance (SR) [11][12][13] have received considerable attention during recent years. Their use as nondestructive and real-time monitoring tools is of great advantage for growth process analysis.…”

Section: Manufacturingmentioning

confidence: 99%

In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE

Massoudi

Habchi

Rebey

et al. 2011

Journal of Elec Materi

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Metalorganic vapor-phase epitaxy of InAs/GaAs heterostructures was monitored in situ by spectral reflectance in the wavelength range from 600 nm to 1000 nm. Three-dimensional (3D) plots of reflectivity as a function of time and wavelength were used to determine the growth rate evolution. Theoretical simulation of reflectivity signals was carried out by combining a transfer matrix method and a multi-sublayer model. In spite of fixed growth parameters, there was temporal variation of the growth rate. By adjusting simulated reflectivity curves, optical constants of the InAs layer at 450°C were determined. The E 1 critical point energy was also found experimentally at this temperature. Good agreement with calculated values is obtained.

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