InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects

Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

“…MBE investigations suggest that As 4 flux has a nonlinear effect on the QD PL wavelength, producing a decrease in wavelength as the As 4 flux is increased for low fluxes and producing a increase in wavelength for the highest As 4 fluxes investigated. [40] Our investigations have produced a similar dependence as shown in Figure 12. We observe a dramatic decrease in the ground state energy as the AsH 3 partial pressure is increased from 8 × 10 -3 torr to 0.05 torr.…”

“…A thick GaAs buffer was grown at 650°C on near singular GaAs(100) ± 0.1° and then cooled to 600°C for growth of a 300 nm Al 0.60 Ga 0. 40 As cladding and a 70 nm GaAs nucleation layer. We have found that InAs QDs nucleate more uniformly on GaAs layers that exhibit step flow growth with wide terraces than on surfaces that are grown at lower temperature that exhibit two dimensional island growth.…”

“…The temperature of the sample was ramped to 600°C for growth of the remainder of the GaAs cap (65 nm) and a symmetric Al 0.60 Ga 0. 40 As cladding. TMIn, TEGa, and EDMAAl were used for the group III precursors and 100 percent AsH 3 was the group V precursor.…”

The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD

“…MBE investigations suggest that As 4 flux has a non-linear effect on the QD PL wavelength, producing a decrease in wavelength as the As 4 flux is increased for low fluxes and producing an increase in wavelength for the highest As 4 fluxes investigated [15]. Our investigations have produced a similar dependence as shown in Fig.…”

Growth and characterization of InAs quantum dots on Si(001) substrates

“…This behavior is quite different from the case of InAs quantum dots grown on GaAs substrates. On GaAs substrates, InAs dot density has been observed to increase with increasing As BEP, [12] ARTICLE IN PRESS although the peculiar behavior of dot density increase with decreasing arsenic pressure has also been reported under certain conditions [13,14]. The reason for the peculiar behavior remains unclear.…”